Memory Word Line Programming to Reduce Coupling Effects

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Solution Overview

Problem

Sequential programming of memory cells leads to a coupling effect between word lines, affecting the program process accuracy and efficiency due to charge migration between adjacent memory cells.

Innovation Solution

A programming scheme that divides word lines into two types based on the storage state of adjacent memory cells, applying different program voltages and time periods to optimize the programming process, reducing the coupling effect and improving efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If sequential programming is used to program memory cells, then the programming process can be implemented systematically, but the coupling effect between word lines increases, affecting program process accuracy and efficiency

Engineering Contradiction:

Improveprogramming process implementationVSAvoidprogram process accuracy

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent segments word lines into first type (even-numbered) and second type (odd-numbered) based on their position and coupling characteristics. Different programming strategies are applied to each type: first type word lines are programmed with higher voltage and longer time, while second type word lines use lower voltage and shorter time. This segmentation resolves the contradiction by allowing systematic implementation while maintaining precision through differentiated handling of coupled word lines.

Inventive Principle:

Principle #1Segmentation

2Ease of manufacture

Engineering Contradiction:

Improveprogramming process implementationVSAvoidprogramming efficiency

Core Design Contradiction:

Ease of manufactureVSProductivity

Solution Approach 1:

By segmenting word lines into two types with different programming parameters, the patent enables parallel processing of independent word lines while avoiding the inefficiency of sequential programming. The even-numbered and odd-numbered word lines can be programmed simultaneously with appropriate voltage and time settings, significantly improving productivity while maintaining systematic implementation.

Inventive Principle:

Principle #1Segmentation

3Speed

If higher program voltage is applied to all word lines, then programming speed increases, but charge migration between adjacent memory cells increases, affecting accuracy

Engineering Contradiction:

Improveprogramming speedVSAvoidprogram process accuracy

Core Design Contradiction:

SpeedVSManufacturing precision

Solution Approach 1:

The patent applies local quality by differentiating programming parameters based on the specific characteristics of each word line type. First type word lines (even-numbered) receive higher voltage and longer programming time, while second type word lines (odd-numbered) receive lower voltage and shorter time. This localized differentiation enables optimized programming speed for each word line type while preventing excessive charge migration that would compromise accuracy.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The scheme significantly reduces program time and enhances the accuracy and reliability of memory cell programming by minimizing electrical interference and charge migration between word lines.

Implementation Method 1

affecting the program process accuracy and efficiency due to charge migration between adjacent memory cells

Methodology Applied

Scientific EffectCharge migration:

Implementation Method 2

minimizing electrical interference and charge migration between word lines

Methodology Applied

Scientific EffectElectrical interference:

Data Source

PatentUS20260031159A1Programming methods of memory, memories, and memory systems

Publication Date: 2026.01.29 YANGTZE MEMORY TECH CO LTD

AI summary

The present disclosure provides a programming method of a memory, a memory, and a memory system, and relates to the technical field of semiconductor chips. The method includes: applying a first program voltage to a first type of selected word lines and a reference voltage to unselected word lines adjacent to the first type of selected word lines during a first time period of a first program stage; and applying a second program voltage to the first type of selected word lines and a pass voltage to the unselected word lines adjacent to the first type of selected word lines during a second time period of the first program stage, wherein memory cells coupled to the unselected word lines adjacent to the first type of selected word lines are in an erased state, and the second program voltage is greater than the first program voltage.