3D Semiconductor Memory Word Line Kick Voltage Stabilization
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Solution Overview
Problem
Three-dimensionally arranged semiconductor memory devices face challenges in achieving high-speed read operations due to long RC delays in word lines, leading to voltage stabilization issues and potential erroneous data determination.
Innovation Solution
The semiconductor memory device employs a first kick operation where the drive voltage is temporarily set higher than the target voltage and then decreased, and a second kick operation where the drive voltage is temporarily set lower than the target voltage, allowing for sensing before voltage stabilization, and the sense amplifier nodes are charged to different voltages based on their locations to appropriate potentials for accurate data determination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are three-dimensionally arranged to increase storage capacity, then the storage density is improved, but the RC delay in word lines increases causing voltage stabilization issues
Solution Approach 1:
The patent applies preliminary action by performing kick operations (applying voltages higher or lower than the target voltage) before the actual read operation to accelerate voltage stabilization on word lines. This preliminary voltage adjustment ensures that the word line reaches the target voltage faster, reducing the overall read time in 3D memory structures where RC delays are significant.
2Speed
If kick operations are performed to accelerate voltage stabilization, then the read speed is improved, but the complexity of voltage control increases
Solution Approach 1:
The patent employs periodic action by implementing kick operations at specific intervals during the read process. The kick voltage is applied temporarily to accelerate stabilization, then removed once the target voltage is reached. This periodic application of additional voltage control simplifies the overall control logic compared to continuous complex voltage regulation, while still achieving fast read speeds.
3Loss of time
If sensing is performed before voltage stabilization, then the read time is reduced, but data determination accuracy deteriorates
Solution Approach 1:
The patent uses preliminary action by applying kick operations to pre-stabilize the word line voltage before the sensing operation begins. This ensures that when sensing is performed, the voltage is already stable at the target level, allowing for accurate data determination without requiring extended wait time. The preliminary voltage preparation enables both fast reading and high accuracy.
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes first and second memory cells; a first word line connected to the first and second memory cells; a first bit line connected to the first memory cell; a second bit line connected to the second memory cell; a first sense amplifier connected to the first bit line; a second sense amplifier connected to the second bit line; a voltage generation circuit; and a first row decoder which supplies a voltage to the first word line.