Non-Volatile Memory Word-Line Switching for Defect Detection
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Solution Overview
Problem
Semiconductor manufacturing processes face challenges in detecting defects or faults due to increasing complexity and integration, particularly in non-volatile memory devices where defects in ground selection lines, word lines, and string selection lines are difficult to identify.
Innovation Solution
A non-volatile memory device design applies voltages to both sides of ground selection lines, word lines, and string selection lines using separate switch circuits to facilitate defect detection by comparing operating conditions and parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If voltage is applied to both sides of ground selection lines, word lines, and string selection lines using separate switch circuits, then defect detection capability is improved, but device complexity increases
Solution Approach 1:
The patent divides the voltage application system into separate first and second switch circuits, where the first switch circuit applies voltage to one side of selection lines and the second switch circuit applies voltage to the other side. This segmentation enables independent control and comparison of voltage application paths, facilitating defect detection while managing system complexity through modular architecture
Solution Approach 2:
The patent introduces separate first and second pass transistors as intermediary elements between the switch circuits and the selection lines. These intermediary components enable controlled voltage application to both sides of ground selection lines, word lines, and string selection lines, allowing defect detection through comparative analysis while maintaining manageable device complexity
2Productivity
If separate switch circuits are used to apply voltage to both sides of selection lines, then defect detection speed is improved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct stages corresponding to the formation of first and second switch circuits, which can be implemented using standard semiconductor fabrication processes. This segmentation allows for systematic manufacturing while enabling rapid defect detection through the independent voltage application paths
Solution Approach 2:
The first and second switch circuits are designed with universal functionality to handle multiple types of selection lines (ground selection lines, word lines, string selection lines) using the same basic circuit architecture. This multi-functionality simplifies manufacturing by reusing proven circuit designs across different line types while maintaining fast defect detection capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances defect detection efficiency by allowing for quicker voltage transfer and enabling precise identification of defects through comparative analysis, improving manufacturing yield and reliability.
Implementation Method 1
A non-volatile memory device includes a voltage generator configured to generate a plurality of operating voltages and to apply the plurality of operating voltages to the memory cell array
Data Source
AI summary
A non-volatile memory device includes a memory cell array including a plurality of memory cells respectively connected to a plurality of word lines; a plurality of first pass transistors each connected to one side of one of the plurality of word lines; a plurality of second pass transistors each connected to the other side of one of the plurality of word lines; a voltage generator configured to generate a plurality of operating voltages and to apply the plurality of operating voltages to the memory cell array; in response to a first switch control signal, a first switch circuit configured to connect the plurality of first pass transistors to the voltage generator; and in response to a first switch control signal, a second switch circuit configured to connect the plurality of second pass transistors to the voltage generator.