Semiconductor Memory Write Coding for Word-Line Error Variation
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Solution Overview
Problem
Existing memory systems face challenges in effectively reducing error rates in semiconductor memory due to variations in error rates across different word lines, leading to unreliable data storage and retrieval.
Innovation Solution
Implementing error suppression coding with adjustable coding parameters to optimize data transmission, including asymmetric coding and page symmetric coding, and dynamically adjusting coding rates and state control variables based on error rates to improve data reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error suppression coding is applied uniformly to all word lines using a fixed coding parameter, then the implementation is simple, but the error rate cannot be effectively reduced for word lines with varying error characteristics
Solution Approach 1:
The patent applies different coding parameters to different word lines based on their specific error characteristics. The memory controller calculates error rates for each word line individually and selects optimal coding parameters (such as coding rate and asymmetric coding settings) tailored to each word line's error profile, rather than using a uniform coding approach across all word lines.
Solution Approach 2:
The patent dynamically adjusts coding parameters based on real-time error rate measurements. The memory controller continuously monitors error rates for each word line and adapts the coding parameters accordingly, making the error suppression coding flexible and responsive to changing memory conditions rather than static and fixed.
2Reliability
If coding parameters are optimized for each individual word line, then error rate reduction is maximized, but the processing time and complexity increase
Solution Approach 1:
The patent performs preliminary error rate calculations and coding parameter selections during the data writing process. By determining the optimal coding parameters before actual data storage and making the coding decisions in advance, the system avoids time-consuming optimizations during data retrieval while still achieving word line-specific error suppression.
Solution Approach 2:
The memory controller automatically calculates error rates and selects optimal coding parameters for each word line without requiring external intervention or complex external processing. The system self-manages the coding parameter optimization process, reducing the need for time-consuming external analysis and adjustment.
Data Source
AI summary
According to one embodiment, a memory controller generates first write data by executing an error suppression coding in regard to data, based on a first coding parameter; calculates an error rate for each of word lines from the first read data corresponding to the first write data, and selects a first word line from the word lines, based on the error rate. The memory controller generates second write data by executing the error suppression coding while varying the first coding parameter, in regard to data that is to be written in a first memory cell coupled to the first word line; sets a second coding parameter, based on an error rate of second read data corresponding to the second write data; and executes the error suppression coding, based on the second coding parameter, in regard to data that is to be written in the first memory cell.