Non-volatile Memory Write Pulse Voltage Adjustment
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Solution Overview
Problem
Non-volatile flash memory cells deteriorate over multiple erase and program operations, leading to inadequate read margins and data interpretation errors due to unexpected changes in threshold voltage.
Innovation Solution
A non-volatile memory system that records the number of data write pulses and compares it to a preset threshold to adjust the voltage absolute value of the pulses based on the deterioration state of memory cells, ensuring a maintained read margin by increasing the voltage when deterioration is detected.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple erase and program operations are performed on flash memory cells, then data write capability is achieved, but memory cell deterioration occurs leading to threshold voltage changes and inadequate read margins
Solution Approach 1:
The patent applies dynamics by making the write pulse voltage adjustable rather than fixed. The memory controller dynamically adjusts the voltage amplitude of write pulses based on the number of programming operations performed, increasing voltage when cells deteriorate to maintain effective programming capability throughout the memory's service life
Solution Approach 2:
The patent changes the voltage parameter of write pulses based on the programming operation count. The memory controller modifies the voltage amplitude parameter dynamically, increasing it when cells show signs of deterioration from multiple programming cycles, thereby compensating for cell degradation and maintaining reliable data writing capability
2Device complexity
If fixed voltage write pulses are used for data programming, then simple control is maintained, but read correctness deteriorates due to memory cell degradation over time
Solution Approach 1:
The patent implements feedback by having the memory controller monitor the number of programming operations performed on memory blocks and use this information to adjust subsequent write pulse voltages. This feedback mechanism allows the system to adapt to cell deterioration automatically while maintaining relatively simple control logic
Solution Approach 2:
The memory controller performs self-adjustment by automatically modifying write pulse voltages based on internally tracked programming counts without requiring external intervention or complex external control circuits, thereby maintaining control simplicity while improving read correctness
3Reliability
If increased voltage pulses are applied to compensate for cell deterioration, then read margin is maintained, but energy consumption and potential cell damage increase
Solution Approach 1:
The system dynamically adjusts voltage only when necessary - specifically when the number of programming operations exceeds certain thresholds indicating cell deterioration. Before deterioration occurs, normal voltage levels are used, minimizing energy consumption. Voltage increase is applied selectively and dynamically rather than continuously
Solution Approach 2:
The voltage parameter is changed selectively based on programming count thresholds rather than being constantly elevated. The memory controller modifies the voltage parameter only when cell deterioration is detected through operation counting, thereby maintaining read margin only when necessary and reducing overall energy consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prolongs the service life of non-volatile memory and improves data read correctness by adjusting the voltage of write pulses according to the memory cell's deterioration state, maintaining a stable read margin.
Implementation Method 1
the change of a threshold voltage of the selected memory cell
Data Source
AI summary
A non-volatile memory and a data writing method are provided. The non-volatile memory includes a memory array and a memory controller. The memory array has a plurality of memory cells. The memory controller is configured to perform a data write operation on a plurality of selected memory cells. In the data write operation, the memory controller records a total number of times that a data write pulse is supplied, compares the total number of times of the data write pulse to a preset threshold value to obtain an indication value, and adjusts an absolute value of a voltage of the data write pulse according to the indication value.