Memory Write Command Timing with Shortened Activation Delay

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Solution Overview

Problem

Existing memory devices face inefficiencies in write operations due to long latency periods between activation and write commands, which can be exacerbated by industry-standard timing constraints, leading to potential errors and reduced bandwidth.

Innovation Solution

A host device transmits activation and write commands with a delay that is shorter than the row access to column access delay associated with read commands, utilizing a function based on existing timing constraints and additional parameters to optimize write command timing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the row address to column address delay (tRCD) timing constraint is followed for read commands, then timing reliability is maintained, but write operation latency increases and bandwidth decreases

Engineering Contradiction:
Improvetiming constraint complianceVSAvoidwrite operation latency
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies different timing constraints for read and write operations. Specifically, it uses tRCD (row address to column address delay) for read commands while using a shorter tRCD_WR (write command delay) for write commands. This local differentiation allows write operations to benefit from reduced latency while read operations maintain their timing reliability, effectively resolving the contradiction between timing compliance and write speed.

Inventive Principle:
Principle #3Local quality

2Reliability

If the row address to column address delay (tRCD) timing constraint is followed for read commands, then timing reliability is maintained, but write bandwidth decreases

Engineering Contradiction:
Improvetiming constraint complianceVSAvoidwrite bandwidth
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements operation-specific timing constraints where write commands use a shortened delay period (tRCD_WR) compared to the standard tRCD used for read commands. This local quality approach enables higher write bandwidth by reducing the time each write operation occupies the memory interface, while read operations continue to use the more conservative tRCD timing for reliability.

Inventive Principle:
Principle #3Local quality

3Loss of time

If a shorter delay is used for write commands compared to read commands, then write latency is reduced, but timing constraint violations may occur

Engineering Contradiction:
Improvewrite command latencyVSAvoidtiming constraint compliance
Core Design Contradiction:
Loss of timeVSReliability

Solution Approach 1:

The patent changes the timing parameter specifically for write operations by introducing tRCD_WR as a distinct parameter from the standard tRCD. This parameter change allows the system to use a shorter delay period for write commands while maintaining separate, appropriate timing constraints for each operation type, thus reducing write latency without causing timing violations.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12517825B2Write command timing enhancement
Publication Date: 2026.01.06 MICRON TECHNOLOGY INC
  • US12517825B2 patent drawing
  • US12517825B2 patent drawing
  • US12517825B2 patent drawing

AI summary

Methods, systems, and devices for write command timing enhancement are described. A host device may transmit (e.g., issue), to a memory device, an activation command and an associated write command according to a delay that is different (e.g., shorter) than a row access to column access delay associated with read commands. In some examples, the delay between the activation command and the associated write command may be a function of the row access to column access delay associated with read commands and one or more additional parameters, such as a timing constraint or a speed parameter of the memory device.