Memristive Read Circuit Using Multi-Voltage Non-Destructive Sensing

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Solution Overview

Problem

Memristor crossbar arrays face scalability limitations due to leakage currents, and existing complementary resistance switches require destructive reading, necessitating rewriting after each read operation.

Innovation Solution

A method for non-destructive reading of memristive structures using at least two measurements during a single read-out operation, employing a read circuit that applies different voltage values to determine the memristive state without altering it, allowing for multiple reads without rewriting.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If complementary resistance switches are used to reduce leakage currents, then scalability is improved, but the reading operation becomes destructive requiring rewriting

Engineering Contradiction:
ImprovescalarmbilityVSAvoidreading operation
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent applies parameter changes by using multiple different voltage values (first voltage value, second voltage value, etc.) during the reading operation. By measuring current at different voltage points, the system can determine the memristive state non-destructively, resolving the contradiction between scalability improvement and reading operation destructiveness

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements beforehand cushioning by performing multiple measurements at different voltage values before making a final state determination. This multi-measurement approach cushions against the destructive effect of single high-voltage reads, allowing state verification without triggering unwanted switching

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Speed

If single measurement reading is used, then operation speed is maintained, but reading accuracy is insufficient to determine memristive state

Engineering Contradiction:
Improvereading speedVSAvoidreading accuracy
Core Design Contradiction:
SpeedVSMeasurement precision

Solution Approach 1:

The patent applies partial action by performing multiple measurements at different voltage values rather than a single measurement. This excessive action (more measurements than minimum required) provides redundant information that improves state determination accuracy while maintaining operational efficiency through systematic measurement sequences

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables non-destructive reading of memristive states, enhancing the scalability and reliability of memristor-based data processing applications by reducing the need for frequent rewriting and minimizing errors.

Implementation Method 1

a read circuit (602) configured to read a respective memristive state (608) of the at least one memristive structure (100)

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS20240120002A1Devices and methods for reading a memristive element
Publication Date: 2024.04.11 TECHIFAB GMBH
  • US20240120002A1 patent drawing
  • US20240120002A1 patent drawing
  • US20240120002A1 patent drawing

AI summary

According to various aspects, a method is provided including: setting a memristive element into a memristive state of a plurality of memristive states, determining one or more static state parameter values of the memristive element associated with the memristive state, wherein determining the one or more static state parameter values includes: determining a current/voltage characteristic of the memristive element, and fitting the current/voltage characteristic based on a physical model to determine the one or more static state parameter values, wherein the physical model is based on static state parameters for which the static state parameter values are determined.