Diffusive Memristor TRNG Circuit With Low-Complexity Random Bit Generation
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Solution Overview
Problem
Existing true random number generators (TRNGs) face challenges in scalability, circuit complexity, and power consumption, particularly in hardware security applications for the Internet of Things (IoT).
Innovation Solution
A TRNG device utilizing the stochastic delay time of threshold switching in a silver doped silicon oxide (Ag:SiOx) diffusive memristor, which exploits the probabilistic process of silver particles detaching from a Ag reservoir to generate random bits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If prior TRNG devices use thermal noise or telegraph noise mechanisms, then randomness can be generated, but circuit complexity increases and scalability is limited
Solution Approach 1:
The patent extracts the randomness generation function to a single diffusive memristor device, eliminating the need for complex oscillator circuits, amplifier chains, or multiple processing stages. The stochastic switching behavior of the memristor directly produces random bits through its resistance transitions, simplifying the overall circuit architecture while maintaining randomness quality.
Solution Approach 2:
The diffusive memristor serves multiple functions: it acts as both the randomness source and the switching element, eliminating the need for separate random number generation and processing circuits. This multi-functional approach reduces circuit complexity while maintaining the ability to generate high-quality random bits.
2Reliability
If prior TRNG devices use conventional architectures, then random bits can be generated, but power consumption is high
Solution Approach 1:
The patent employs periodic voltage pulses applied to the diffusive memristor to trigger stochastic switching events. This periodic excitation allows the device to generate random bits on demand with low energy consumption, as the memristor naturally relaxes between pulses without requiring continuous power input.
Solution Approach 2:
The diffusive memristor utilizes its own intrinsic stochastic switching behavior and natural relaxation process to generate randomness, eliminating the need for external amplification, filtering, or post-processing circuits that would consume additional power. The device essentially serves itself by converting thermal noise and atomic diffusion directly into usable random bits.
3Reliability
If prior TRNG devices are designed for security applications, then randomness is generated, but post-processing is required to remove bias
Solution Approach 1:
The patent designs the diffusive memristor switching characteristics to inherently produce unbiased random bits from the outset, eliminating the need for subsequent bias removal processing. The stochastic nature of silver particle detachment and filament formation creates naturally balanced probability distributions, allowing direct use of generated bits for cryptographic applications without Von Neumann correction or other post-processing.
4Reliability
If prior TRNG devices use electron-based mechanisms, then randomness can be generated, but vulnerability to environmental variations increases
Solution Approach 1:
The patent replaces electron-based randomness mechanisms with ion-based diffusion processes in the memristor. The stochastic movement and detachment of silver ions through the oxide matrix are less sensitive to environmental variations such as temperature and radiation compared to electron-based oscillators, providing more stable and reliable randomness generation in harsh environments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TRNG device achieves advantages in scalability, circuit complexity, and power consumption compared to prior memristor-based TRNG designs, with the ability to pass all 15 NIST randomness tests without post-processing.
Implementation Method 1
A diffusive memristor as disclosed herein is a volatile device that relies on the diffusion dynamics of metal atoms in the memristive layer
Implementation Method 2
the stochasticity in delay time can be attributed to the probabilistic process by which silver (Ag) particles detach from a Ag reservoir
Data Source
AI summary
A true random number generator device based on a diffusive memristor is disclosed. The random number generator device includes a diffusive memristor driven by a pulse generator circuit. The diffusive memristor produces a stochastically switched output signal. A comparator circuit receives the stochastically switched output signal from the diffusive memristor and generates an output signal having a random pulse width. An AND gate logic circuit is driven by a clock signal and the output signal from the comparator circuit. The AND gate logic circuit produces a combined output signal. A counter circuit receives the combined output signal from the AND gate logic circuit and generates a random bit string output signal.