Integrated MEMS CMOS Gas Sensor with High-Resistivity Heater
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Solution Overview
Problem
The existing semiconductor sensors for detecting gases, particularly those involving MEMS and CMOS devices, face challenges with large form factors, low heating efficiency, high power consumption, and high noise levels due to the separation of MEMS and CMOS devices, which complicates manufacturing and reduces performance.
Innovation Solution
Integration of MEMS and CMOS devices through the formation of vias and bonding operations with metallic materials, utilizing high-resistivity heaters like tungsten alloy or tungsten silicide to enhance heating efficiency and reduce form factor, while minimizing parasitic capacitance and noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If MEMS and CMOS devices are fabricated separately and then integrated, then device functionality is achieved, but the form factor becomes large and manufacturing complexity increases
Solution Approach 1:
The patent merges MEMS and CMOS device fabrication into a single integrated process flow, where both device types are formed on the same substrate simultaneously rather than separately and then combined. This integration reduces the overall form factor while maintaining full functionality of both MEMS and CMOS components.
Solution Approach 2:
The patent creates a universal fabrication process that can produce both MEMS and CMOS devices using the same manufacturing steps, materials, and equipment. This multi-functional approach eliminates the need for separate fabrication lines and reduces the space required for device production and integration.
2Adaptability or versatility
If separate fabrication and integration of MEMS and CMOS devices is used, then device functionality is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent combines multiple fabrication processes into a unified flow where MEMS and CMOS structures are formed concurrently. This merging eliminates the need for separate fabrication and subsequent integration steps, thereby reducing manufacturing complexity while maintaining device functionality.
3Temperature
If conventional heating structures are used in MEMS devices, then basic heating function is provided, but heating efficiency is low and power consumption is high
Solution Approach 1:
The patent changes the material parameter of the heating structure from conventional low-resistivity materials to high-resistivity materials. This parameter change increases the heating efficiency by generating more heat per unit current, thereby reducing power consumption while maintaining the required temperature for gas detection.
4Temperature
If conventional heating structures are used, then basic heating function is provided, but power consumption is high
Solution Approach 1:
The patent modifies the electrical resistance parameter of the heating material to be high, which directly reduces the power consumption for a given heating requirement. The high-resistivity material converts electrical energy to thermal energy more efficiently, lowering the overall power demand of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration results in a compact sensor with improved signal-to-noise ratio, high sensitivity, and reactivity, enabling efficient gas detection at elevated temperatures with reduced power consumption.
Implementation Method 1
a heater made of high resistivity materials like tungsten alloy or tungsten silicide is used to enhance heating efficiency
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.