MEMS Surface Roughening via Eutectic Interdiffusion

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In microelectromechanical systems (MEMS) devices, stiction due to surface adhesion forces can inhibit the movement of moving parts, leading to functional impairment, particularly when surfaces with high contact areas come into contact, and existing methods fail to effectively reduce stiction without damaging the devices.

Innovation Solution

A method involving the deposition of a first material over a second material, followed by heating to a predetermined temperature where the materials interdiffuse and form an alloy, and then removing the first material, resulting in a roughened surface that decreases the real contact area and hence stiction, using materials like germanium and silicon or aluminum and silicon to create eutectic bonds below their individual melting points.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If surfaces are made smooth to ensure complete contact, then contact area increases, but stiction increases and movement is inhibited

Engineering Contradiction:
Improvestiction reductionVSAvoidcontact area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent applies surface roughening to create curved, non-planar surfaces on MEMS components. By introducing microscopic curvature and irregularities to the bonding surfaces, the real contact area is reduced while maintaining apparent contact, thereby decreasing stiction forces and enabling reliable movement of MEMS parts.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The patent applies selective roughening to specific bonding surfaces of MEMS devices. By modifying only the local surface properties at the bonding interface through controlled material deposition and removal, the invention achieves reduced stiction at contact points while preserving the integrity and smoothness of other device surfaces.

Inventive Principle:
Principle #3Local quality

2Strength

If heating is applied to melt and interdiffuse materials for bonding, then bonding strength increases, but device damage risk increases

Engineering Contradiction:
Improvebonding strengthVSAvoiddevice damage
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

The patent utilizes eutectic phase transitions to achieve material interdiffusion and bonding at temperatures below the melting points of the individual materials. By exploiting the eutectic reaction where a mixture of materials melts at a lower temperature than either pure component, the invention achieves strong bonding without subjecting the MEMS device to excessive thermal stress that could cause damage.

Inventive Principle:
Principle #36Phase transitions

Solution Approach 2:

The patent employs composite material systems with specific eutectic properties, such as germanium-silicon or aluminum-silicon combinations. These composite material pairs are selected because they form eutectic alloys with lower melting points, enabling thermal processing at reduced temperatures that provide adequate bonding strength while minimizing the risk of thermal damage to the MEMS device.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The surface roughening significantly reduces stiction forces by decreasing the contact area, allowing for relative motion of stationary objects and preventing damage to the MEMS devices, as the eutectic bonding process occurs at lower temperatures than the materials' melting points, minimizing potential damage.

Implementation Method 1

interdiffusing a portion of the first material and the second material at a predetermined temperature

Methodology Applied
Scientific EffectInterdiffusion: Diffusion

Implementation Method 2

heating the germanium and the silicon surface to a predetermined temperature, wherein a portion of the germanium and a portion of silicon at a boundary layer between the film and the silicon surface melt at the predetermined temperature

Methodology Applied
Scientific EffectEutectic bonding:

Implementation Method 3

a portion of the germanium and a portion of silicon at a boundary layer between the film and the silicon surface melt at the predetermined temperature

Methodology Applied
Scientific EffectMelting: Melting

Implementation Method 4

removing the first material, wherein the surface of the second material is roughened in response to removing the first material

Methodology Applied
Scientific EffectSurface roughening:

Data Source

PatentUS9611133B2Film induced interface roughening and method of producing the same
Publication Date: 2017.04.04 INVENSENSE INC
  • US9611133B2 patent drawing
  • US9611133B2 patent drawing
  • US9611133B2 patent drawing

AI summary

Various embodiments provide for a method for roughening a surface of a MEMs device or the surface of a CMOS surface. A first material can be deposited in a thin layer over a surface made of a second material. After heating, the first and second materials, they can partially melt and interdiffuse, forming an alloy. The first material can then be removed and the alloy is removed at the same time. The surface of the second material that is left behind has then been roughened due to the interdiffusion of the first and second materials.