Integrated MEMS Force Sensor With On-Die Digital Readout
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current MEMS force sensors are large, produce analog outputs that require noisy electrical conversion to digital signals, and electromechanical switches lack durability and versatility for multiple actuation levels.
Innovation Solution
Integration of sensing elements and digital circuitry on a MEMS force sensor die, using piezoresistive strain gauges and CMOS processing to convert analog signals to digital codes, with etched flexures and gaps for protection and overload prevention, and a MEMS mechanical switch with integrated CMOS circuitry for amplification and calibration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If wire bond pads and stacked silicon/glass die are used in current MEMS force dies, then the sensing diaphragm can be constructed, but the device size becomes relatively large
Solution Approach 1:
The patent combines the sensing diaphragm, readout circuitry, and signal processing components into a single integrated device structure, eliminating the need for separate wire bond pads and stacked die configurations. This integration directly reduces device size while maintaining manufacturing feasibility through unified fabrication processes.
2Reliability
If analog output is produced by current MEMS force dies, then the sensing element can provide continuous signal, but the signal requires noisy electrical environment for conversion to digital signal
Solution Approach 1:
The patent replaces the analog electrical signal transmission system with a digital signal processing system integrated directly on the device. This substitution eliminates the noisy electrical environment required for analog-to-digital conversion by performing digitization within the device itself, thereby improving signal integrity and reducing susceptibility to electrical noise.
3Reliability
If conductive dome structures are used in electromechanical switches, then the electrical circuit can be completed, but the switches lack durability due to material wear
Solution Approach 1:
The patent replaces the mechanical conductive dome switch structure with a capacitive sensing mechanism that detects contact through electrical field changes rather than physical conduction. This substitution eliminates the wear inherent in mechanical contact systems, significantly improving durability and extending the operational lifespan of the switch.
4Adaptability or versatility
If conductive material is used in electromechanical switches, then the electrical circuit can be completed, but the switches are incapable of multiple levels of actuation
Solution Approach 1:
The patent implements a capacitive sensor system that can detect and differentiate multiple actuation levels through a single sensing element. By measuring variations in capacitance corresponding to different levels of mechanical deflection or contact pressure, the system achieves multi-level actuation capability without requiring multiple separate switch configurations, thereby improving versatility while maintaining simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a compact, low-cost, digital force sensor capable of multiple actuation levels and dynamic force measurement, with improved durability and signal integrity.
Implementation Method 1
a sensing element arranged on the bottom surface of the sensor die, wherein the sensing element is configured to convert a strain on the bottom surface of the sensor die to an analog electrical signal that is proportional to the strain
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
Described herein is a ruggedized wafer level microelectromechanical ("MEMS") force sensor including a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor ("CMOS") circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.