MEMS Heater Design for Chamber Pressure Control
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Solution Overview
Problem
Current wafer-level capping processes for micro-electromechanical systems (MEMS) devices cannot form hermetically sealed chambers at different pressures on the same wafer, leading to increased production costs and processing time due to the need for separate capping processes for each type of MEMS device.
Innovation Solution
Incorporating a heating element within the CMOS substrate that is separated from a hermetically sealed chamber by an out-gassing layer, allowing for the adjustment of pressure within the chamber by inducing gas release through heating, enabling the formation of chambers at various pressures without additional processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wafer-level capping processes are used to form hermetically sealed chambers, then manufacturing efficiency is improved, but the ability to form chambers at different pressures on the same wafer is lost
Solution Approach 1:
The patent incorporates an out-gassing layer and heating element during the wafer-level capping process itself, rather than adding them later. This preliminary action enables pressure control capability to be built into the manufacturing process, allowing different pressure chambers to be formed on the same wafer while maintaining high manufacturing efficiency
Solution Approach 2:
The patent uses the heating element to change the temperature parameter of the out-gassing layer, which in turn changes the pressure parameter inside the hermetically sealed chambers. By controlling the heating temperature and duration, different pressure levels can be achieved within chambers on the same wafer, providing pressure control capability without sacrificing manufacturing efficiency
2Adaptability or versatility
If separate capping processes are used for each type of MEMS device, then pressure control capability is improved, but production costs and processing time increase
Solution Approach 1:
The patent makes the wafer-level capping process universal by enabling it to handle multiple types of MEMS devices with different pressure requirements in a single process. The out-gassing layer and heating element are incorporated into the standard capping process, allowing one process to perform multiple functions: forming hermetic seals and controlling different pressure levels for different devices on the same wafer
Solution Approach 2:
By incorporating the pressure control mechanism (out-gassing layer and heating element) into the wafer-level capping process itself, the patent eliminates the need for separate post-processing steps. This preliminary action integrates multiple functions into one process, maintaining production efficiency while adding pressure control capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for the formation of hermetically sealed chambers with different pressures on the same substrate, optimizing MEMS device performance and reducing production costs by eliminating the need for separate capping processes.
Implementation Method 1
A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber
Implementation Method 2
A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber
Data Source
AI summary
The present disclosure relates to a micro-electromechanical system (MEMs) package. In some embodiments, the MEMs package has a plurality of conductive interconnect layers disposed within a dielectric structure over an upper surface of a first substrate. A heating element is electrically coupled to a semiconductor device within the first substrate by one or more of the plurality of conductive interconnect layers. The heating element is vertically separated from the first substrate by the dielectric structure. A MEMs substrate is coupled to the first substrate and has a MEMs device. A hermetically sealed chamber surrounding the MEMs device is disposed between the first substrate and the MEMs substrate. An out-gassing material is disposed laterally between the hermetically sealed chamber and the heating element.