MEMS Actuator Isolation Structures for Shock Resistance

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Solution Overview

Problem

Existing miniature camera actuators face challenges in reducing size and enhancing shock resistance while maintaining functionality, particularly in electronic devices like cellular telephones and surveillance devices, where traditional MEMS manufacturing techniques are limited in achieving smaller, more reliable components.

Innovation Solution

The development of a MEMS actuator device with a substrate featuring a trench and isolated semiconductor material portions, allowing for precise motion control and electrical isolation, enabling smaller size and enhanced shock resistance through advanced fabrication techniques such as etching and micromachining.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If traditional MEMS manufacturing techniques are used, then actuator functionality is maintained, but device size cannot be sufficiently reduced

Engineering Contradiction:
Improveactuator sizeVSAvoidshock resistance
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The substrate is divided into isolated semiconductor portions by trenches, creating separate functional regions. This segmentation allows independent optimization of different actuator components, enabling size reduction while maintaining structural integrity and shock resistance through isolated stress paths.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate are given different properties through the trench isolation structure. The isolated semiconductor portions can have locally optimized characteristics for their specific functions, allowing the overall device to be smaller while each local region maintains the reliability needed for its role.

Inventive Principle:
Principle #3Local quality

2Volume of moving object

If device size is reduced, then integration into electronic devices is improved, but electrical isolation becomes more difficult to achieve

Engineering Contradiction:
Improvecamera actuator sizeVSAvoidelectrical isolation structure
Core Design Contradiction:
Volume of moving objectVSDevice complexity

Solution Approach 1:

The substrate is segmented into isolated semiconductor portions by etching trenches and filling them with insulating material. This creates natural electrical isolation barriers that reduce the need for additional complex isolation structures, enabling miniaturization while maintaining proper electrical separation between circuit elements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Insulating material is introduced as an intermediary substance within the trenches to provide electrical isolation between adjacent semiconductor portions. This intermediary structure enables compact design with sufficient electrical separation without requiring larger spacing between components.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If advanced fabrication techniques are implemented, then manufacturing precision is improved, but production cost increases

Engineering Contradiction:
Improvetrench formation precisionVSAvoidfabrication cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The fabrication process segments the substrate into isolated portions through trench formation. While this requires precise etching, the segmented structure allows subsequent processing steps to be performed independently on each region, simplifying certain manufacturing aspects and enabling batch processing that can reduce overall production costs despite the initial precision requirements.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10435291B2MEMS isolation structures
Publication Date: 2019.10.08 ADEIA IMAGING LLC
  • US10435291B2 patent drawing
  • US10435291B2 patent drawing
  • US10435291B2 patent drawing

AI summary

A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.