Batch Through-Hole Etching in MEMS Probes
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Solution Overview
Problem
Current methods for manufacturing through-holes in MEMS devices, such as probes with cantilevers, are time-consuming and costly as they require individual ion beam etching, posing a risk of damage to the opposite wall and limiting batch production capabilities.
Innovation Solution
A method involving directional dry etching with a shadow mask at an angle to create through-holes in a layer of material, allowing for simultaneous production of multiple holes by forming pits, depositing a second material layer, and removing base material to access the holes from both sides, reducing sensitivity to etching conditions and eliminating the need for individual ion beam milling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If individual ion beam etching is used to create through-holes, then manufacturing precision is improved, but productivity deteriorates
Solution Approach 1:
The process segments the through-hole creation into two independent stages: first creating holes in the first material layer, then creating through-holes in the base material. This allows parallel processing of multiple holes simultaneously in batch mode, dramatically improving productivity while maintaining precision through controlled etching parameters
Solution Approach 2:
The method performs preliminary actions by first creating holes in the first material layer before removing the base material. This preliminary hole formation serves as a template that guides subsequent through-hole creation, ensuring precise positioning without requiring individual ion beam etching for each through-hole
2Manufacturing precision
If individual ion beam etching is used to create through-holes, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The method merges multiple through-hole creation operations into a single batch process. Multiple through-holes are created simultaneously in parallel using the same etching parameters and template structure, eliminating the sequential time penalty of individual ion beam etching while maintaining consistent precision across all holes
3Manufacturing precision
If focussed ion beam is used to penetrate the wall, then manufacturing precision is improved, but object-affected harmful factors increase
Solution Approach 1:
The method applies partial action by creating holes in the first material layer that extend only partially through the base material, stopping before damaging the opposite wall. The remaining through-hole formation is completed by selective base material removal, achieving full penetration without the excessive ion beam energy that causes wall damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient batch production of through-holes in MEMS devices, reducing production time and cost while minimizing damage to the substrate, allowing for the creation of probes with distal and non-distal through-holes suitable for various applications like cell penetration and scanning.
Implementation Method 1
subjecting the first side of the base substrate provided with the second layer of material as the layer to said step of directional dry etching using the aperture as the opening of a shadow mask, where said directional etching is performed with said direction being at an angle α to the normal to the base main plane of at least 5°, to provide through-holes in the second layer of material
Data Source
Figure 1
Figure 2A~2B
Figure 2C~2D
AI summary
A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises - after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210), - etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281), - depositing a second layer of material (240) on the base material in the cavity (280), and - subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.