MEMS Stress Decoupling via Elastic Spring Arms

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Solution Overview

Problem

Microelectromechanical systems (MEMS) in semiconductor chips are prone to mechanical stress during processing and operation, leading to deformation and malfunction, especially due to thermal fluctuations and assembly stresses, which conventional compliant chip attach methods like silicone glue cannot effectively decouple, especially for high-sensitivity devices.

Innovation Solution

A microelectromechanical device design featuring a semiconductor carrier with a microelectromechanical element positioned at a distance, connected via spring arms that elastically couple the element to the carrier, forming a gap to absorb mechanical stress and reduce strain, allowing for improved decoupling and stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a compliant chip attach method like silicone glue is used to decouple mechanical stress, then some stress decoupling is achieved, but the decoupling capability is limited and difficult to transfer to other assembling techniques, especially for high-sensitivity devices

Engineering Contradiction:
Improvestress decoupling capabilityVSAvoidapplicability to different assembling techniques
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent introduces a compliant layer as an intermediary between the semiconductor chip and the substrate. This compliant layer acts as a stress-absorbing mediator that decouples mechanical stress from the MEMS structure while maintaining electrical connectivity through conductive elements. The compliant layer's material properties allow it to absorb assembly-induced stresses without transmitting them to the sensitive MEMS device, achieving effective stress decoupling that is adaptable to different assembling techniques including wire bonding and flip chip.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Volume of moving object

If the microelectromechanical element is positioned close to the semiconductor carrier for compact design, then device size is reduced, but mechanical stress from assembly and thermal fluctuations directly affects the MEMS structure causing deformation and malfunction

Engineering Contradiction:
Improvedevice sizeVSAvoidmechanical stress impact
Core Design Contradiction:
Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The compliant layer serves as a protective intermediary positioned between the semiconductor chip and the substrate, creating a stress-isolating buffer zone. This intermediary layer absorbs assembly-induced stresses and thermal expansion differences before they can reach the MEMS structure, enabling the device to maintain compact dimensions while protecting the sensitive elements from mechanical stress and thermal fluctuations.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Strength

If rigid bonding is used to secure the chip for strong mechanical coupling, then structural strength is improved, but stress is transferred to the microelectromechanical system leading to deformation and uncontrolled behavior

Engineering Contradiction:
Improvemechanical coupling strengthVSAvoidMEMS operational stability
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent employs a compliant layer as a flexible film structure that provides mechanical coupling between the chip and substrate while maintaining flexibility to absorb stresses. This thin film structure offers sufficient structural strength for secure mounting but possesses the compliance necessary to prevent stress transmission to the MEMS device, thereby maintaining operational stability and preventing deformation during assembly and thermal cycling.

Inventive Principle:
Principle #30Flexible shells and thin films

4Ease of manufacture

If thermal expansion coefficients of different materials are mismatched for ease of manufacturing, then fabrication is simplified, but thermal fluctuations during operation cause mechanical stress and deformation of the MEMS structure

Engineering Contradiction:
Improvefabrication simplicityVSAvoidthermal stress
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent addresses thermal stress by carefully selecting materials with compatible thermal expansion coefficients for the compliant layer, substrate, and chip. By adjusting and matching these material parameters, the design simplifies fabrication processes while minimizing differential thermal expansion during operation. The compliant layer's material parameters are specifically chosen to bridge the thermal expansion differences between dissimilar materials, preventing stress concentration and deformation in the MEMS structure during thermal cycling.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The elastic coupling mechanism effectively reduces mechanical stress transfer to the microelectromechanical element, enhancing its accuracy and reliability by maintaining structural integrity and sensitivity, even under thermal and assembly-induced loads.

Implementation Method 1

spring arms that elastically couple the element to the carrier, forming a gap to absorb mechanical stress

Methodology Applied
Scientific EffectElasticity: Elasticity

Data Source

PatentUS9902612B2Method for forming a microelectromechanical device
Publication Date: 2018.02.27 INFINEON TECHNOLOGIES AG
  • US9902612B2 patent drawing
  • US9902612B2 patent drawing
  • US9902612B2 patent drawing

AI summary

A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.