MEMS Top Notch Slit Profile for Adhesive Removal

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Solution Overview

Problem

Challenges in MEMS device manufacturing arise from adhesive layer removal difficulties due to narrow slits, leading to reduced bulk manufacturing yields and sound leakage, exacerbated by passivation layer deposition issues.

Innovation Solution

Implementing a top notch slit profile in MEMS devices with a uniform or substantially uniform width that bulges at the top, facilitating easier adhesive layer removal and preventing passivation layer bottlenecking, thereby enhancing manufacturing yields and reducing sound leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If the slit width is reduced to prevent sound leakage, then sound leakage is reduced, but adhesive layer removal becomes difficult and manufacturing yields decrease

Engineering Contradiction:
Improvesound leakageVSAvoidmanufacturing yields
Core Design Contradiction:
Object-generated harmful factorsVSProductivity

Solution Approach 1:

The slit profile is designed with non-uniform width along its length, creating different local characteristics: a narrower lower portion to prevent sound leakage and a wider upper portion to facilitate adhesive layer removal. This local variation in geometry resolves the contradiction by allowing each section of the slit to serve its specific function optimally.

Inventive Principle:
Principle #3Local quality

2Object-generated harmful factors

If the slit width is reduced to improve sound isolation, then sound leakage is reduced, but passivation layer deposition creates bottlenecking issues

Engineering Contradiction:
Improvesound leakageVSAvoidpassivation layer deposition quality
Core Design Contradiction:
Object-generated harmful factorsVSManufacturing precision

Solution Approach 1:

The slit geometry transitions from a narrow lower portion to a wider upper portion, creating favorable local conditions for passivation layer deposition at the upper section while maintaining sound isolation at the lower section. This local quality variation prevents bottlenecking during deposition while preserving acoustic isolation.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If the slit width is increased to facilitate adhesive layer removal, then adhesive removal becomes easier, but sound leakage increases

Engineering Contradiction:
Improveadhesive layer removalVSAvoidsound leakage
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The upper portion of the slit has a larger width that facilitates adhesive layer removal during manufacturing, while the lower portion maintains a narrower width to prevent sound leakage. This spatial differentiation of slit width allows both manufacturing ease and acoustic isolation to be optimized simultaneously.

Inventive Principle:
Principle #3Local quality

4Manufacturing precision

If the slit width is increased to prevent passivation layer bottlenecking, then deposition quality improves, but sound leakage increases

Engineering Contradiction:
Improvepassivation layer deposition qualityVSAvoidsound leakage
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The slit design features a wider upper section that prevents bottlenecking during passivation layer deposition, ensuring high manufacturing precision. The lower section maintains a narrower width to effectively block sound leakage. This local differentiation resolves the contradiction between deposition quality and acoustic isolation.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20250317694A1Top notch slit profile for MEMS device
Publication Date: 2025.10.09 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250317694A1 patent drawing
  • US20250317694A1 patent drawing
  • US20250317694A1 patent drawing

AI summary

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) device in which a slit at a movable mass of the MEMS device has a top notch slit profile. The MEMS device may, for example, be a speaker, an actuator, or the like. The slit extends through the movable mass, from top to bottom, and has a width that is uniform, or substantially uniform, from the bottom of the movable mass to proximate the top of movable mass. Further, in accordance with the top notch slit profile, top corner portions of the MEMS substrate in the slit are notched, such that a width of the slit bulges at the top of the movable mass. The top notch slit profile may, for example, increase the process window for removing an adhesive from the slit while forming the MEMS device.