MEMS Transducer Protrusion Density for Stress Reduction

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Solution Overview

Problem

Micro-electromechanical systems (MEMS) transducers, such as capacitive micromachined ultrasonic transducers, face issues with accumulated charge and contact stresses that lead to shifts in electrical performance and reduced reliability due to uniform protrusion densities across their surfaces.

Innovation Solution

The method involves forming a first dielectric layer on a bottom electrode with a higher density of protrusions in the central region compared to the outer region, followed by a second dielectric layer with a cavity, and bonding a top electrode to create a structure where the protrusions are within the cavity, reducing contact area and stress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If uniform protrusion density is used across the transducer surface, then manufacturing is simplified, but accumulated charge and contact stresses increase leading to reduced reliability

Engineering Contradiction:
Improveprotrusion fabrication simplicityVSAvoidtransducer device reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent implements non-uniform protrusion density distribution across the transducer surface, with higher density in the central region and lower density in outer regions. This local variation optimizes charge distribution and stress management in different areas of the device, improving overall reliability while maintaining manufacturing feasibility through systematic patterning processes.

Inventive Principle:
Principle #3Local quality

2Stress or pressure

If higher protrusion density is used in the central region, then contact stresses are reduced, but manufacturing complexity increases

Engineering Contradiction:
Improvecontact stressVSAvoidprotrusion density distribution
Core Design Contradiction:
Stress or pressureVSDevice complexity

Solution Approach 1:

The transducer surface is segmented into distinct regions (central and outer) with different protrusion densities. This segmentation allows targeted stress management in the central region while reducing manufacturing complexity in outer regions, balancing performance requirements with fabrication capabilities.

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If protrusions are formed with larger contact area, then electrical performance is improved, but accumulated charge increases leading to performance shifts

Engineering Contradiction:
Improveelectrical performanceVSAvoidaccumulated charge
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent optimizes protrusion dimensions and density distribution to achieve optimal contact area. By carefully controlling protrusion height, width, and spacing parameters, the design maintains sufficient contact for electrical performance while limiting total contact area to reduce charge accumulation and associated performance degradation.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20240375146A1Transducer Device and Method of Manufacture
Publication Date: 2024.11.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240375146A1 patent drawing
  • US20240375146A1 patent drawing
  • US20240375146A1 patent drawing

AI summary

A method of forming a transducer includes depositing a first dielectric layer on a first electrode, patterning the first dielectric layer to form a plurality of first protrusions in a first region and a plurality of second protrusions in a second region, where a density of the plurality of first protrusions in the first region is different from a density of the plurality of second protrusions in the second region, and bonding the first dielectric layer to a second electrode using a second dielectric layer, where sidewalls of the second dielectric layer define a cavity disposed between the first electrode and the second electrode, and where the plurality of first protrusions and the plurality of second protrusions are disposed in the cavity.