Semiconductor Device with Merged Source and Sense Electrodes
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Solution Overview
Problem
Conventional semiconductor chips require a larger sense pad electrode area compared to the source electrode, leading to increased inactive area and manufacturing costs, and potential degradation of MOSFET characteristics due to edge termination structures.
Innovation Solution
The semiconductor device incorporates a source electrode with distinct regions connected to different wires, where the resistance of the path through the sense current wire is higher than that of the source current wires, allowing for reduced sense pad electrode area without separate sense pad electrodes, and includes a connection region with higher resistance to restrict current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate sense pad electrode is provided at a distance from the source electrode, then current detection function is achieved, but the area of the sense pad electrode is enlarged relative to the source electrode
Solution Approach 1:
The source electrode and sense pad electrode are merged into a single integrated electrode structure. The source electrode includes a first region connected to the source current wire and a second region connected to the sense current wire, eliminating the need for a separate sense pad electrode while maintaining current detection functionality.
Solution Approach 2:
The source electrode serves dual functions: it acts as both the source electrode for current supply and as the sense pad electrode for current detection. This multi-functional design allows the same structure to perform both functions simultaneously, reducing the overall area required.
2Reliability
If the sense pad electrode area is enlarged, then current detection capability is improved, but the inactive area increases and manufacturing cost increases
Solution Approach 1:
By merging the source electrode and sense pad electrode into one integrated structure, the inactive area is reduced and manufacturing complexity is lowered, leading to cost reduction while preserving current detection capability.
3Reliability
If separate sense pad electrode and source electrode are provided, then current detection is enabled, but edge termination structures are required which may degrade MOSFET characteristics
Solution Approach 1:
The integration of source electrode and sense pad electrode eliminates the need for separate edge termination structures, thereby avoiding potential degradation of MOSFET characteristics while maintaining current detection functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient current sensing with reduced inactive area, stabilizing the current ratio and preventing characteristic fluctuations, thus lowering manufacturing costs and maintaining breakdown voltage stability.
Implementation Method 1
A resistance of a path through which current flows through the second wire may be higher than a resistance of a path through which the current flows through the first wire
Data Source
AI summary
In a conventional semiconductor chip, the source electrode and the sense pad electrode for current detection are provided separately and distanced from each other on the front surface of the semiconductor chip. The area occupied by the sense pad electrode must be several times the area of a MOSFET cell unit. Therefore, there is a problem that the area of the sense pad electrode is enlarged relative to the source electrode. Provided is a semiconductor device including a semiconductor substrate; a front surface electrode provided above the semiconductor substrate; a first wire for a first terminal connected to the front surface electrode; and a second wire for current sensing connected to the front surface electrode. A resistance of a path through which current flows through the second wire is higher than a resistance of a path through which the current flows through the first wire.