Semiconductor Memory with Merged Volatile Nonvolatile Cells
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Solution Overview
Problem
Existing semiconductor memory devices combining volatile and non-volatile cells are larger and more complex, requiring additional circuitry and power supply voltages, making them less efficient and more costly to produce.
Innovation Solution
A semiconductor memory device is developed with an array of volatile and non-volatile cells that can be manufactured using a simplified process similar to conventional RAM production, where a single mask change during wafer processing converts volatile cells into non-volatile cells, allowing for flexible and cost-effective production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of stationary object
If conventional memory cells with both volatile and non-volatile circuits are used, then data retention without power is achieved, but the cell size increases and reduces the number of cells per area
Solution Approach 1:
The patent combines volatile and non-volatile memory circuits into a single integrated memory cell structure. The non-volatile memory circuit is merged with the volatile memory cell, allowing both functions to coexist in the same cell area, thereby achieving data retention without power while maintaining compact cell size and high cell density per area.
Solution Approach 2:
The memory cell is designed to perform multiple functions: it operates as a volatile memory cell during normal operation and as a non-volatile memory cell for data retention. The same physical cell structure supports both volatile and non-volatile storage modes, eliminating the need for separate cell structures and reducing overall area requirements.
2Duration of action of stationary object
If conventional memory cells with both volatile and non-volatile circuits are used, then data retention without power is achieved, but additional commands and power supply voltages are required
Solution Approach 1:
The control circuits for both volatile and non-volatile operations are merged into a unified control structure. The same control logic and power supply voltage manage both the volatile memory cell and the non-volatile memory circuit, eliminating the need for additional commands and reducing control complexity.
3Adaptability or versatility
If a select circuit is used to configure RAM cells as ROM cells, then both volatile and non-volatile operation is achieved, but additional control circuitry and power management is required
Solution Approach 1:
The memory cell is designed with universal functionality that allows it to operate in both volatile (RAM) and non-volatile (ROM) modes without requiring separate control circuits. The same cell structure and control logic support both operation modes, achieving versatility while minimizing additional control circuitry and power management requirements.
Data Source
AI summary
A semiconductor memory includes an array of volatile memory cells, wherein one of the volatile memory cells has transistors connected in a first memory cell circuit, and at least one non-volatile memory cell having transistors connected in a second memory cell circuit, wherein the transistors in the first memory cell circuit are at least one more than the transistors in the second memory cell circuit.