Semiconductor Optical Device Mesa Bonding to Suppress Etching Residues
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Solution Overview
Problem
The manufacturing of semiconductor optical devices faces challenges due to etching residues that occur during the bonding process, which can hinder subsequent steps such as resist application and device performance.
Innovation Solution
A method is developed to form a mesa on a second substrate, which is then bonded to a first substrate, and the second substrate is removed by etching, with the etching proceeding more easily in a specific direction to minimize residue formation, and the first semiconductor layer is also removed to eliminate any remaining residues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the second substrate is removed by etching after bonding, then the device structure is simplified and subsequent processing is facilitated, but etching residues are generated that hinder resist application and device performance
Solution Approach 1:
The patent changes the etching parameters by controlling the etching depth to be exactly the thickness of the second substrate, and by optimizing etching conditions to achieve complete substrate removal without residues. This parameter control resolves the contradiction by enabling complete substrate removal while preventing residue formation.
Solution Approach 2:
The patent performs preliminary actions by forming a mesa structure with precise dimensions before substrate removal, and by preparing the bonding interface in advance. These preliminary structures and preparations enable the etching process to proceed cleanly without generating harmful residues.
2Manufacturing precision
If the mesa length in the first direction is controlled to be equal to or less than the second substrate length, then etching completeness is improved, but the device structure becomes more constrained
Solution Approach 1:
The patent precisely controls the mesa length parameter to match or exceed the substrate length in the first direction, ensuring complete etching removal. This parameter optimization achieves etching completeness while maintaining reasonable structural flexibility through defined geometric relationships.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the influence of etching residues, ensuring smoother processing and improved device performance by controlling the etching direction and removing residues, thus enhancing the manufacturing efficiency of semiconductor optical devices.
Implementation Method 1
after the bonding, removing the second substrate by etching
Data Source
AI summary
A method of manufacturing a semiconductor optical device having a first substrate and a chip. The method includes forming a first semiconductor layer on a second substrate, forming a second semiconductor layer on the first semiconductor layer, forming, on the second substrate, a mesa including a portion of the second semiconductor layer, cutting the second substrate to form a chip including the mesa and the second substrate, bonding the mesa of the chip to the first substrate, after the bonding, removing the second substrate by etching, and after the removing the second substrate, removing the first semiconductor layer. The etching proceeds more easily in a second direction crossing a first direction than in the first direction, and after the cutting, a length of the mesa in the first direction is equal to or less than a length of the second substrate in the first direction.