Mesa Semiconductor Structure for Embedded Layer Continuity
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Solution Overview
Problem
The formation of a thinner portion due to a transition surface in the p type semiconductor layer during the epitaxial growth process can cause interruption of the first embedded layer, leading to unstable operation in semiconductor devices.
Innovation Solution
A semiconductor device design with a projecting part on the first embedded layer covering the top surface of the flat part and side surface of the mesa part, and a second embedded layer on the first embedded layer, along with a first and second electrode configuration, to prevent interruption of the first embedded layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a p type semiconductor layer is formed during the epitaxial growth process, then the leak current can be suppressed, but a thinner portion may arise due to the transition surface which can cause interruption of the first embedded layer
Solution Approach 1:
The patent applies local quality by forming a thicker p-type semiconductor layer specifically at the transition region between the mesa structure and flat surface, while maintaining thinner layers in other regions. This localized thickness variation ensures continuous embedded layer formation at the critical transition zone without unnecessarily increasing layer thickness elsewhere, thus suppressing leak current while maintaining manufacturing precision.
Solution Approach 2:
The patent employs preliminary action by pre-forming the p-type semiconductor layer with a designed thickness distribution before completing the embedded layer formation. The thicker portion is strategically positioned at the transition region in advance, preventing potential interruption of the embedded layer during subsequent processing steps.
2Reliability
If the thickness of the p type semiconductor layer is reduced to reduce element capacitance, then the capacitance decreases, but the embedded layer may become interrupted due to the thinner portion
Solution Approach 1:
The patent implements local quality by creating a spatially varying thickness profile of the p-type semiconductor layer. The layer is thinner in regions where low capacitance is desired while being thicker at the transition region where embedded layer continuity is critical. This localized differentiation resolves the contradiction between capacitance reduction and embedded layer integrity.
3Manufacturing precision
If a thicker p type semiconductor layer is formed to ensure embedded layer continuity, then the embedded layer remains continuous, but the element capacitance increases
Solution Approach 1:
The patent applies local quality by forming a thicker p-type semiconductor layer only at the specific transition region where embedded layer continuity is required, while keeping the layer thinner in other areas. This localized thickness control maintains embedded layer continuity without unnecessarily increasing the overall element capacitance.
Solution Approach 2:
The patent utilizes parameter changes by varying the thickness parameter of the p-type semiconductor layer across different spatial locations. The thickness is optimized to be greater at the transition region for continuity and smaller elsewhere for low capacitance, dynamically adjusting the parameter to satisfy multiple conflicting requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses interruption of the first embedded layer, ensuring stable operation and reducing leak current and electrostatic capacitance, thereby enhancing the performance and stability of the semiconductor device.
Implementation Method 1
a first embedded layer that is of the second type, and has a first portion configured to cover a top surface of the flat part and a second portion configured to cover a side surface of the mesa part
Data Source
AI summary
A semiconductor device according to the present disclosure includes a main part that includes a semiconductor substrate, a first cladding layer provided on the semiconductor substrate, an active layer provided on the first cladding layer, and a second cladding layer provided on the active layer, and in which a flat part and a mesa part are formed, the mesa part including the active layer and a first embedded layer covering a top surface of the flat part and a side surface of the mesa part, wherein the first embedded layer has a projecting part on a top surface of a portion provided in a region within a height of the mesa part from a boundary between the mesa part and the flat part in the top surface of the flat part.