Mesa Width Variation in Semiconductor Power Devices to Reduce Oscillation
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Solution Overview
Problem
Semiconductor power devices in existing technologies experience severe voltage oscillation when turned on or off due to simultaneous exhaustion and pinching off of mesa structures at the same voltage.
Innovation Solution
The semiconductor power device features an n-shaped substrate with an n-shaped epitaxial layer and multiple grooves, including mesa structures with varying widths, where a p-shaped body region and n-shaped source region are integrated, allowing for a slow-varying capacitance by exhausting and pinching off mesa structures with different widths at different voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If all mesa structures have the same width, then the device structure is simple and easy to manufacture, but severe voltage oscillation occurs when the device is turned on or off
Solution Approach 1:
The patent applies local quality by creating mesa structures with different widths at different locations. Specifically, at least one mesa structure has a first width while another mesa structure has a second width that is different from the first width. This local variation in geometric properties allows different mesa structures to be exhausted and pinched off at different voltages, thereby reducing voltage oscillation during device switching while maintaining manufacturing feasibility through standardized fabrication processes.
2Stability of the object's composition
If mesa structures are exhausted and pinched off at the same voltage, then the device operation is uniform, but severe voltage oscillation is generated
Solution Approach 1:
The patent segments the uniform mesa structure into multiple mesa structures with different widths. By dividing the previously uniform structure into non-uniform segments (with at least one mesa structure having a first width and another having a second width), the device achieves staggered exhaustion and pinching-off characteristics. This segmentation creates a more gradual transition during switching, reducing voltage oscillation while maintaining controlled device operation.
Data Source
AI summary
The present application belongs to the technical field of semiconductor power devices and provides a semiconductor power device. The semiconductor power device includes an n-shaped substrate, an n-shaped epitaxial layer positioned on the n-shaped substrate, and at least three grooves recessed inside the n-shaped epitaxial layer, where a portion of the n-shaped epitaxial layer between two adjacent grooves of the at least three grooves is a mesa structure, an upper part of the mesa structure is provided with a p-shaped body region, and an n-shaped source region is provided inside the p-shaped body region. The mesa structure includes at least one mesa structure with a lower width being a first width and at least one mesa structure with a lower width being a second width, and the second width is greater than the first width.