Mobile Electrostatic Carrier Micro-Vacuum Adhesion for Wafer Handling

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Solution Overview

Problem

Thin semiconductive substrates are difficult to handle in manufacturing environments due to their ductile nature, leading to damage and yield loss during de-bonding, especially under harsh conditions like high shear force, vacuum, plasma, and immersion processes, where traditional bonding technologies fail to provide secure and contamination-free handling.

Innovation Solution

A mobile electrostatic carrier (MESC) with a layer of patterned material creating micro-vacuum cavities across the bonding surface, using electrostatic fields and micro-vacuum adhesion to securely hold semiconductive wafers without external power or mechanical clamping, and employing multiple adhesion modes to withstand shear loads and liquid immersion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional bonding technologies are used to handle thin semiconductive substrates, then the substrates can be transported, but the substrates suffer damage and yield loss during de-bonding under harsh manufacturing conditions

Engineering Contradiction:
Improvesubstrate handling reliabilityVSAvoiddamage and yield loss
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent replaces traditional mechanical bonding systems with an electrostatic bonding system. The MESC uses electrostatic fields generated by charged electrodes to bond substrates, eliminating the need for mechanical clamps, adhesives, or fasteners that cause damage during de-bonding. The electrostatic field can be turned off to release substrates without mechanical stress.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the bonding mechanism from mechanical to electrostatic by controlling electrical parameters. The MESC system applies controlled electrostatic fields to create and release bonds on demand, allowing substrates to be held securely during processing and released gently without mechanical stress that causes damage.

Inventive Principle:
Principle #35Parameter changes

2Force

If traditional bonding technologies are used under high shear force conditions, then substrates can be held, but the bonds fail and substrates become dislodged

Engineering Contradiction:
Improveshear load resistanceVSAvoidbond stability
Core Design Contradiction:
ForceVSReliability

Solution Approach 1:

The patent replaces mechanical bonding with electrostatic bonding that distributes shear forces across the entire substrate surface through the electrostatic field. The charged electrodes create uniform attraction forces that resist shear loads more effectively than localized mechanical contact points, preventing substrate dislodgement under high shear force conditions.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Ease of operation

If traditional bonding technologies are used during liquid immersion processes, then substrates can be handled, but liquids migrate between substrate and carrier causing contamination

Engineering Contradiction:
Improveimmersion process capabilityVSAvoidliquid migration and contamination
Core Design Contradiction:
Ease of operationVSObject-generated harmful factors

Solution Approach 1:

The patent replaces mechanical sealing with electrostatic adhesion that creates a uniform bonding field resistant to liquid penetration. The electrostatic attraction between the charged MESC and substrate maintains consistent contact pressure across the entire interface, preventing liquid migration and contamination during immersion processes.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

4Ease of operation

If electrostatic bonding is used to hold substrates, then substrates can be released without mechanical stress, but the bonding strength may be insufficient under harsh conditions

Engineering Contradiction:
Improvegentle release capabilityVSAvoidbonding strength
Core Design Contradiction:
Ease of operationVSStrength

Solution Approach 1:

The patent controls the electrostatic field parameters (voltage, charge distribution) to dynamically adjust bonding strength. During processing, high electrostatic fields provide strong bonding; during release, the field is reduced or turned off for gentle substrate release. The system maintains strong bonds under harsh conditions while enabling stress-free release.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The MESC provides a contamination-free, rigid handling solution that securely adheres and transports thin substrates through manufacturing processes, including high shear forces and liquid exposure, without requiring adhesives or fasteners, ensuring reliable bonding and preventing liquid migration.

Implementation Method 1

different modes of adhesion are used to bond the semiconductive wafer to the MESC, including electrostatic adhesion

Methodology Applied
Scientific EffectElectrostatic adhesion: Electrostatics

Implementation Method 2

A mobile electrostatic carrier (MESC) with a layer of patterned material creating micro-vacuum cavities across the bonding surface, using electrostatic fields and micro-vacuum adhesion to securely hold semiconductive wafers

Methodology Applied
Scientific EffectVacuum adhesion: Vacuum

Data Source

PatentUS10236202B2System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum
Publication Date: 2019.03.19 DIABLO CAPITAL INC
  • US10236202B2 patent drawing
  • US10236202B2 patent drawing
  • US10236202B2 patent drawing

AI summary

A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive wafer. A layer of patterned material is superimposed across the bonding surface of MESC so that the cavities integrated into the layer of patterned material are able produce micro-vacuums that further adhere the semiconductive wafer to the MESC.