Adjustable Mesh Assembly for Ion-Radical Flux Control in Plasma Processing
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Solution Overview
Problem
Current plasma processing technologies face challenges in achieving flexible and controlled ion and radical fluxes, which are essential for efficient fabrication of complex integrated circuits with diverse feature aspect ratios and material stacks, as they struggle to adjust the ion-to-radical flux ratio over a wide range.
Innovation Solution
The apparatus and method involve a mesh assembly with a vertical stack of planar meshes in a vacuum chamber, allowing for adjustable vertical permeability by positioning the meshes, thereby controlling the ion and radical fluxes and their ratio, which are essential for various plasma processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a fixed plasma processing system is used, then the manufacturing process is simple, but the flexibility to adjust ion-to-radical flux ratio is limited
Solution Approach 1:
The patent implements a dynamic mesh assembly that can be repositioned during plasma processing to change the plasma distribution pattern. The mesh structure includes multiple planes that can be adjusted relative to each other, allowing real-time modification of ion and radical flux ratios without changing the fundamental plasma source configuration. This dynamic adjustment capability provides versatility while maintaining a relatively simple overall system architecture.
Solution Approach 2:
The mesh assembly serves as an intermediary element between the plasma source and the substrate. By introducing this intermediate structure with adjustable geometry, the system can modulate plasma properties (ion-to-radical flux ratio) without directly modifying the plasma source or substrate processing conditions. The mesh acts as a controllable mediator that translates simple mechanical adjustments into complex plasma property changes.
2Manufacturing precision
If plasma processing is performed without mesh assembly, then the device structure is simple, but the control over ion and radical flux distribution is poor
Solution Approach 1:
The mesh assembly is divided into multiple planar segments that can be independently positioned and adjusted. This segmentation allows precise control over plasma distribution by adjusting individual mesh planes, enabling fine-tuned control of ion and radical flux ratios. The segmented structure provides manufacturing precision while keeping each individual mesh component relatively simple in design.
Solution Approach 2:
The mesh assembly enables control over plasma properties by changing geometric parameters (mesh spacing, orientation, and position) rather than requiring complex changes to plasma generation parameters. By adjusting the physical configuration of the mesh structure, the system achieves precise control over ion and radical flux distribution, translating mechanical parameter changes into plasma property control.
3Manufacturing precision
If the mesh assembly is made complex to achieve precise control, then the control precision improves, but the ease of operation decreases
Solution Approach 1:
The mesh assembly is designed to perform multiple functions: it serves as a plasma distribution structure, a geometric adjustment mechanism, and a flow guidance element. This multi-functionality reduces the need for separate complex control systems, as the same mesh structure achieves both plasma property control and flow management. The universal design improves control precision while maintaining operational simplicity through integrated functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the ion-to-radical flux ratio to be adjusted from a maximum value to a minimum, significantly enhancing the flexibility and control over plasma properties, allowing for efficient processing of substrates with varying requirements, such as achieving vertical sidewalls in metal lines and conformal film deposition.
Implementation Method 1
The mesh assembly includes a vertical stack of planar meshes. The apparatus includes a mesh positioning equipment configured to horizontally move one of the planar meshes to adjust a vertical permeability of the stack
Implementation Method 2
a plasma generation equipment configured to generate plasma in the second portion of the vacuum chamber
Data Source
AI summary
An apparatus for plasma processing a substrate includes a substrate holder to hold the substrate in a first portion of a vacuum chamber, and a mesh assembly segregating the first portion from a second portion of the vacuum chamber along a vertical direction, where the mesh assembly includes a vertical stack of planar meshes. The apparatus includes a mesh positioning equipment to horizontally move one of the planar meshes to adjust a vertical permeability of the stack, and a plasma generation equipment to generate plasma in the second portion of the vacuum chamber.