Mesh Electrode Plasma Supply for Lower Sheath Voltage Control

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Solution Overview

Problem

Existing plasma processing apparatuses with remote plasma sources face challenges in reducing the influence of the remote plasma source on plasma, leading to potential damage to electrodes and leakage of particles into the outer region.

Innovation Solution

The plasma processing apparatus includes a plasma supply part with an upper and lower electrode, a gas supply part, and a voltage adjusting part. The voltage adjusting part lowers the sheath voltage of the sheath region formed on the lower electrode part, reducing damage and particle leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a remote plasma source is used to supply radicals to the processing chamber, then plasma processing capability is improved, but the sheath voltage on the lower electrode part increases causing electrode damage and particle leakage

Engineering Contradiction:
Improveelectrode durabilityVSAvoidsheath voltage damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A mesh electrode is introduced as an intermediary component between the lower electrode part and the plasma. The mesh electrode has a potential slightly higher than the lower electrode part, creating a gentle potential gradient that reduces ion bombardment energy while still allowing radical supply. This intermediary structure prevents direct high-energy ion impact on the lower electrode part, thereby reducing electrode damage and particle leakage.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the plasma supply part generates plasma with high energy ions, then radical supply efficiency is improved, but particle leakage into the outer region increases

Engineering Contradiction:
Improveradical supply efficiencyVSAvoidparticle leakage
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The mesh electrode is designed with specific local properties: it has a potential that is locally adjusted to be slightly higher than the lower electrode part, creating a localized gentle potential gradient in the sheath region. This local quality adjustment allows high-energy plasma generation for efficient radical supply while simultaneously creating a protective zone that prevents particle leakage into the outer region.

Inventive Principle:
Principle #3Local quality

3Power

If the sheath voltage is maintained at high level for effective plasma generation, then plasma generation efficiency is improved, but damage to the lower electrode part increases

Engineering Contradiction:
Improveplasma generation efficiencyVSAvoidelectrode integrity
Core Design Contradiction:
PowerVSStrength

Solution Approach 1:

The electrode structure is segmented into multiple components: the lower electrode part, the mesh electrode, and the upper electrode. This segmentation allows the sheath voltage to be maintained at high levels for effective plasma generation in the bulk plasma region, while the mesh electrode acts as a buffer that protects the lower electrode part from direct high-voltage damage. The potential gradient is distributed across the segmented structure rather than concentrated on a single electrode.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces the sheath voltage, minimizing damage to the lower electrode part and suppressing particle leakage, thereby enhancing the reliability and efficiency of the plasma processing apparatus.

Implementation Method 1

The plasma supply part and the voltage adjusting part may be configured to lower a sheath voltage of a sheath region formed on the lower electrode part during plasma generation in the plasma supply part

Methodology Applied
Scientific EffectSheath voltage: Electric Field

Implementation Method 2

The upper electrode may be electrically connected to the RF power supply and to which an RF voltage from the RF power supply may be applied

Methodology Applied
Scientific EffectRadio-frequency voltage: Electromagnetic Induction

Data Source

PatentUS20250046575A1Plasma Processing Device
Publication Date: 2025.02.06 TOKYO ELECTRON LTD
  • US20250046575A1 patent drawing
  • US20250046575A1 patent drawing
  • US20250046575A1 patent drawing

AI summary

A plasma processing apparatus comprises a plasma supply part including an upper electrode being electrically connected to a RF power supply and to which an RF voltage from the RF power supply is applied, and a lower electrode part being disposed to face the upper electrode, a gas supply part configured to supply to the plasma supply part a processing gas, and a voltage adjusting part used for adjusting a voltage of the upper electrode. The lower electrode part includes an electrode plate having a mesh structure and configured to allow communication between an inner region and an outer region of the plasma supply part provided by the lower electrode part. The plasma supply part and the voltage adjusting part are configured to lower a sheath voltage of a sheath region formed on the lower electrode part during plasma generation in the plasma supply part.