Mesh-Type Isolation Structure for DRAM Storage Node Contact Stability
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Solution Overview
Problem
Current manufacturing processes for dynamic random access memory (DRAM) units with buried gate structures face issues with peeling of isolation structures during the formation of storage node contact plugs, leading to defects in the predetermined opening patterns.
Innovation Solution
A novel semiconductor process involving surface treatment of the recesses in the isolation structure and using a second insulating layer with different materials to improve the steadiness between the plug and surrounding structures, forming a mesh-type isolation structure that extends into the capping layer and defines openings for storage node contact plugs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional isolation structures are formed in interlayer dielectric to define contact plug openings, then the opening patterns can be established, but the isolation structures peel easily from the substrate during manufacturing processes
Solution Approach 1:
The patent applies preliminary action by performing surface treatment on the isolation structure before filling the contact holes. Specifically, the isolation structure surface undergoes treatment (such as plasma treatment or chemical treatment) to enhance adhesion properties before the conductive material is deposited, preventing peeling during subsequent manufacturing processes
Solution Approach 2:
The patent uses composite materials by combining the isolation structure material (such as silicon oxide or silicon nitride) with different materials for the contact plug fill (such as tungsten, copper, or aluminum). The interface between these different materials is treated to ensure strong adhesion, preventing peeling while maintaining the opening pattern integrity
2Manufacturing precision
If isolation structures are formed to define contact plug positions, then the opening patterns are established, but defects occur in the opening patterns due to peeling
Solution Approach 1:
The surface treatment is performed as a preliminary action before filling the contact holes. This treatment modifies the isolation structure surface to prevent peeling defects that would otherwise occur during the filling and subsequent processing steps, thereby maintaining opening pattern integrity
Solution Approach 2:
The patent applies preliminary anti-action by treating the isolation structure surface with adhesion-promoting treatments (such as plasma treatment, chemical etching, or deposition of adhesion layers) before filling. This creates a protective effect that counteracts the peeling tendency during subsequent manufacturing processes
Data Source
AI summary
A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.