MESO Spin-to-Charge Conversion Using Combined Hall Effects
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Solution Overview
Problem
Conventional magnetoelectric spin-orbit (MESO) logic devices face inefficiencies in spin-to-charge conversion, leading to low output voltage, which hinders the ability to cascade devices for large-scale integrated circuits.
Innovation Solution
Employing the extrinsic spin Hall effect and orbital Hall effect in MESO devices, utilizing a high spin-orbit coupled dielectric superlattice and a low spin-orbit coupled layer to enhance spin-to-charge conversion efficiency, increasing output voltage by combining charge currents from both effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional spin-to-charge conversion methods are used in MESO devices, then the device structure is simple, but the output voltage is low
Solution Approach 1:
The patent combines two different physical effects (extrinsic spin Hall effect and orbital Hall effect) within a single MESO device structure. The high spin-orbit coupled dielectric superlattice generates charge current through the extrinsic spin Hall effect, while the low spin-orbit coupled layer generates charge current through the orbital Hall effect. These two mechanisms work together to produce a combined output voltage that is significantly higher than what either mechanism could achieve alone, thus resolving the contradiction between structural simplicity and output voltage.
Solution Approach 2:
The patent employs composite material structures including a high spin-orbit coupled dielectric superlattice (such as Pt/MgO superlattice) combined with a low spin-orbit coupled layer. This composite structure leverages the distinct properties of each material layer to simultaneously achieve efficient spin-to-charge conversion through multiple Hall effects while maintaining a relatively integrated device architecture, thereby improving output voltage without proportionally increasing device complexity.
2Ease of manufacture
If spin-to-charge conversion efficiency is low, then device manufacturing is simple, but energy transfer efficiency is poor
Solution Approach 1:
The patent optimizes key parameters including the thickness of each layer in the superlattice structure, the spin-orbit coupling strength of different materials, and the relative orientation of magnetic layers. By carefully tuning these parameters, the device achieves high spin-to-charge conversion efficiency through enhanced Hall effects while remaining compatible with standard semiconductor manufacturing processes. The parameter optimization allows efficient energy transfer without requiring fundamentally new manufacturing techniques.
3Device complexity
If output voltage is low, then device complexity is reduced, but the ability to cascade devices for large-scale integration is hindered
Solution Approach 1:
By merging the extrinsic spin Hall effect mechanism in the high spin-orbit coupled dielectric superlattice with the orbital Hall effect mechanism in the low spin-orbit coupled layer, the patent achieves a synergistic effect that produces high output voltage. This combined approach enables sufficient signal strength to drive subsequent MESO devices, making large-scale cascaded integration feasible while maintaining a relatively compact and integrated device structure that does not require excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The combined use of extrinsic spin Hall and orbital Hall effects significantly enhances output voltage by a factor of 10, facilitating high-efficiency energy transfer and enabling large-scale integration of MESO devices.
Implementation Method 1
spin-to-charge conversion using the inverse extrinsic spin Hall effect and the inverse orbital Hall effect
Implementation Method 2
spin-to-charge conversion using the inverse extrinsic spin Hall effect and the inverse orbital Hall effect
Implementation Method 3
magnetoelectric switching can be used to convert an input voltage/charge into a magnetic spin state
Implementation Method 4
the spin-orbit coupling effect (e.g., the coupling of an electron's inherent angular momentum with its translational orbital motion)
Data Source
AI summary
Magnetoelectric spin-orbit (MESO) devices, integrated circuit devices and systems with MESO devices, and methods of forming the same, are disclosed herein. In one embodiment, a semiconductor device includes: a first layer including a conductive material; a second layer over the first layer, where the second layer includes a magnetoelectric material; one or more third layers over the second layer, where the third layer(s) include one or more ferromagnetic materials; a fourth layer over the third layer(s), where the fourth layer includes a superlattice with a heavy metal and a dielectric material; and a fifth layer over the fourth layer, where the fifth layer includes a material having low spin-orbit coupling.