MESO Layer Stack Using PMA Magnets for Compact Spintronic Logic
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Solution Overview
Problem
Existing spintronic logic devices have complex manufacturing processes and a large footprint, leading to inefficient use of system real estate and low spin-to-charge conversion efficiency.
Innovation Solution
The use of perpendicular magnetic anisotropy (PMA) magnets and the anomalous Hall effect (AHE) for improved readout voltage in magnetoelectric spin orbit (MESO) devices, incorporating a magnetoelectric capacitor and a PMA layer to simplify manufacturing and enhance spin-to-charge conversion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If existing spintronic logic devices are used, then non-volatile logic and lower operating energy are achieved, but complex manufacturing operations and large footprint are incurred
Solution Approach 1:
The patent changes the magnetic anisotropy parameter from in-plane to perpendicular magnetic anisotropy (PMA) in the ferromagnetic layer. This parameter change enables simpler manufacturing processes while maintaining the non-volatile logic functionality and low operating energy characteristics of spintronic devices
Solution Approach 2:
The patent employs composite material structures including magnetoelectric capacitor layers combined with PMA ferromagnetic layers and spin-orbit coupling materials. These composite structures achieve both simplified manufacturing and improved device performance, resolving the contradiction between manufacturing complexity and energy efficiency
2Stability of the object's composition
If existing spintronic logic devices are used, then non-volatile logic is achieved, but large footprint and inefficient use of system real estate are incurred
Solution Approach 1:
The patent transitions from in-plane magnetization to perpendicular magnetization, effectively utilizing the vertical dimension for magnetic moment orientation. This dimensional change allows for compact device footprints while maintaining non-volatile logic functionality through perpendicular magnetic anisotropy
Solution Approach 2:
The patent implements nested layer structures where magnetoelectric capacitor layers, PMA ferromagnetic layers, and spin-orbit coupling materials are stacked vertically. This nesting approach maximizes functional density within a small footprint, enabling efficient use of system real estate
3Adaptability or versatility
If existing spintronic logic devices are used, then spintronic logic functionality is achieved, but low spin-to-charge conversion efficiency is incurred
Solution Approach 1:
The patent introduces spin-orbit coupling materials as intermediary layers between the magnetoelectric capacitor and the ferromagnetic layer. These intermediary materials enhance the spin-to-charge conversion efficiency by mediating the interaction between electric fields and magnetic moments, thereby reducing energy loss while maintaining spintronic logic functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for faster, simpler, and less expensive manufacturing of spintronic devices with reduced footprint, enabling efficient cascading and improved signal transmission through charge currents.
Implementation Method 1
a magnetoelectric capacitor unit including a magnetoelectric (ME) layer and a ferromagnetic (FM) layer thereon. An input voltage Vin may be applied across the ME layer and the FM layer to switch a ferroelectric polarization within the ME layer by 180 degrees. The above in turn switches the magnetization M1 of an adjacent in-plane magnetic anisotropy (IMA) ferromagnet (FM) layer.
Implementation Method 2
The use of perpendicular magnetic anisotropy (PMA) magnets and the anomalous Hall effect (AHE) for improved readout voltage in magnetoelectric spin orbit (MESO) devices
Data Source
AI summary
A spin orbit logic device includes: a first electrically conductive layer; a layer including a magnetoelectric material (ME layer) on the first electrically conductive layer; a layer including a ferromagnetic material with in-plane magnetic anisotropy (FM layer) on the ME layer; a second electrically conductive layer on the FM layer; a layer including a dielectric material on the second electrically conductive layer (coupling layer); a layer including a spin orbit coupling material (SOC layer) on the coupling layer; and a layer including a ferromagnetic material with perpendicular magnetic anisotropy (PMA layer) on the SOC layer.


