Meta-Atom Sidewall Structure for Stable Plasma Etching

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Solution Overview

Problem

Manufacturing metastructures with meta-atoms having different etch characteristics is challenging due to issues like physical instability and damage during etching processes.

Innovation Solution

The meta-atoms are designed with outwardly sloping sidewalls, particularly in the lower section adjacent to the substrate, to enhance mechanical stability, using a two-stage plasma etch process with adjusted gas ratios and power settings to control the etching process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If meta-atoms are etched into a stratum using conventional single-stage etching methods, then manufacturing process is simple, but meta-atoms with different etch characteristics experience physical instability and damage

Engineering Contradiction:
Improvemechanical stability of meta-atomsVSAvoidetching process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The etching process is segmented into multiple stages with different etch conditions. The first stage uses conditions suitable for larger meta-atoms while the second stage uses conditions suitable for smaller meta-atoms, allowing each meta-atom size to be etched without damage while maintaining mechanical stability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the stratum containing meta-atoms of different sizes receive different etching treatments. The etching process is locally optimized for each meta-atom size category, with larger meta-atoms receiving first-stage etching and smaller meta-atoms receiving second-stage etching, ensuring appropriate etch characteristics for each local region.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If meta-atoms of different sizes and densities are manufactured using uniform etching conditions, then manufacturing process is simple, but meta-atoms with different etch characteristics cannot be properly formed

Engineering Contradiction:
Improveetch characteristic controlVSAvoidmanufacturing process simplicity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The etching process parameters (such as gas flow rates, power settings, and etch chemistry) are changed between different etching stages to match the specific requirements of different meta-atom sizes and densities, enabling precise control over etch characteristics for each meta-atom type.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The etching process is made dynamic by adjusting parameters in real-time between stages. The system transitions from a static single-stage process to a dynamic multi-stage process where etching conditions are adapted based on the specific meta-atom characteristics being processed.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design improves the mechanical stability of meta-atoms, reducing the risk of damage and ensuring consistent manufacturing of metastructures with varying etch characteristics.

Implementation Method 1

performing an etch process that includes a first etch stage and a second etch stage. The first etch stage removes portions of the stratum material such that trenches are etched into the stratum material to form an upper section of the at least one sidewall of each of the meta-atoms

Methodology Applied
Scientific EffectPlasma etching: Plasma

Data Source

PatentUS20250347825A1Metastructures including meta-atoms having outwardly sloping sidewalls
Publication Date: 2025.11.13 NIL TECH APS (DK)
  • US20250347825A1 patent drawing
  • US20250347825A1 patent drawing
  • US20250347825A1 patent drawing

AI summary

The present disclosure describes metastructure optical elements (MOEs), methods for manufacturing the MOEs, and devices incorporating the MOEs. The MOEs include meta-atoms that have outwardly sloping sidewalls. A meta-atom can have sidewalls that are substantially vertical along an upper section of the meta-atoms, and that slope outwardly along a lower section of the meta-atom.