Meta Structure Pillars for IR Signal Quality in Solid-State Sensors
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Solution Overview
Problem
Existing solid-state image sensors have limited quantum efficiency in infrared (IR)/near infrared (NIR) due to low absorption of silicon-based materials, which affects the quality of image signals.
Innovation Solution
A light-adjusting device with regions arranged in a checkerboard pattern, featuring pillars that form meta structures, is used in conjunction with a solid-state image sensor to enhance IR/NIR signal quality and improve color performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based materials are used for photoelectric conversion, then the device structure is simple and manufacturing is easy, but the quantum efficiency in IR/NIR region is limited due to low light absorption
Solution Approach 1:
The patent introduces a three-dimensional meta structure with pillars arranged in a checkerboard pattern above the planar silicon-based photoelectric conversion elements. This vertical dimensionality addition enables enhanced light trapping and absorption in the IR/NIR region without changing the fundamental silicon-based material system, thereby maintaining ease of manufacture while improving quantum efficiency.
Solution Approach 2:
The patent modifies the optical parameters by designing pillars with specific dimensions (height, width, spacing) arranged in a checkerboard pattern. By optimizing these geometric parameters, the light absorption characteristics in the IR/NIR region are significantly improved while maintaining compatibility with standard silicon-based manufacturing processes.
2Reliability
If alternative materials like Ge, GaAs or InGaAs are used to enhance light absorption, then the quantum efficiency in IR/NIR is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent segments the light-adjusting function into a separate meta structure component (pillars in checkerboard pattern) that can be independently optimized and integrated above the existing photoelectric conversion elements. This segmentation allows the silicon-based substrate to remain simple while the added meta structure provides the enhanced IR/NIR absorption capability.
Solution Approach 2:
The meta structure with pillars acts as an intermediary layer between the incident light and the silicon-based photoelectric conversion elements. This intermediary structure enhances light absorption in the IR/NIR region without requiring replacement of the underlying silicon material, thereby avoiding the complexity associated with alternative materials like Ge, GaAs, or InGaAs.
3Ease of manufacture
If conventional light harvesting methods are used, then the manufacturing process remains simple, but the light utilization efficiency is insufficient
Solution Approach 1:
The patent transitions from conventional planar light harvesting to a three-dimensional meta structure with vertically extending pillars arranged in a checkerboard pattern. This dimensional enhancement significantly improves light trapping and utilization efficiency in the IR/NIR region while remaining compatible with standard manufacturing techniques.
Solution Approach 2:
The patent creates a composite light-adjusting system combining the silicon-based photoelectric conversion substrate with an overlying meta structure of pillars. This composite configuration enhances light utilization efficiency by providing multiple light-trapping interfaces and pathways while maintaining manufacturing simplicity through integration with existing silicon-based fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The light-adjusting device effectively enhances IR/NIR signal quality and improves color performance, leading to better image signal quality from the photoelectric conversion elements of the solid-state image sensors.
Implementation Method 1
the quantum efficiency in infrared (IR)/near infrared (NIR) are usually limited due to low absorption of silicon-based material
Implementation Method 2
signal electric charges may be generated according to the amount of light received in the light sensing portion
Data Source
AI summary
A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.