Metadata Pre-Erase Control in Non-Volatile Memory During Seek
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Solution Overview
Problem
The existing data storage devices face inefficiencies in write operations due to the latency introduced by the need to erase blocks in non-volatile memory before writing metadata, which increases the overall time required for data storage and retrieval.
Innovation Solution
Implementing pre-erase control circuitry to opportunistically erase blocks in non-volatile memory during idle times, such as during seek operations, to eliminate the erase latency and reduce the time spent on write processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If blocks in non-volatile memory are erased before write operations, then write reliability is improved, but write latency increases due to the time required for erasure
Solution Approach 1:
The system performs block erasure in advance during seek operations before the actual write operation is needed. The pre-erase control circuitry monitors seek operations and triggers erasure of target blocks during the seek time, so that when the write operation commences, the blocks are already erased and ready for immediate data writing, thus eliminating write latency while maintaining reliability
Solution Approach 2:
The system proactively counteracts the potential latency issue by performing the erasure operation beforehand during idle seek time. By anticipating the need for erased blocks and preparing them in advance during periods when the actuator is moving to different tracks, the system prevents write latency from occurring in the first place
2Loss of time
If block erasure is performed during seek operations, then write latency is reduced, but device complexity increases due to additional control circuitry
Solution Approach 1:
The pre-erase control circuitry is designed to perform multiple functions: it monitors seek operations, determines which blocks require erasure, triggers the erasure process, and manages the coordination between the actuator mechanism and non-volatile memory. This multi-functional approach consolidates what could be multiple separate components into a single integrated control unit, reducing overall system complexity while achieving the latency reduction goal
Solution Approach 2:
The system uses its own idle seek time to perform the erasure operations without requiring external intervention or additional dedicated time resources. The pre-erase control circuitry autonomously manages the erasure process during periods when the actuator mechanism is already moving, making the system self-sufficient in eliminating write latency without adding external complexity
3Productivity
If seek time is reduced below threshold, then productivity is improved, but pre-erase operations cannot be completed
Solution Approach 1:
The system performs erasure operations partially during seek operations, erasing blocks as time permits rather than requiring complete erasure before the write operation. The pre-erase control circuitry monitors the remaining seek time and adjusts the erasure progress accordingly, erasing as many blocks as possible during the available window. This partial action approach maintains high productivity while making progress on pre-erase operations
Solution Approach 2:
The system employs periodic background erasure operations that occur during idle seek time. Rather than requiring a single long seek operation to complete all erasures, the system performs multiple smaller erasure tasks across different seek operations, gradually building up a pool of pre-erased blocks over time. This periodic approach ensures pre-erase reliability is maintained through repeated attempts while preserving high seek operation productivity
Data Source
AI summary
Various illustrative aspects are directed to a data storage device, method, and one or more processing devices that are configured to: send a first command to a non-volatile memory in response to determining that a seek time associated with a seek operation exceeds a threshold; and send a second command to the non-volatile memory at or before an end of the seek operation, wherein the non-volatile memory is configured to begin performing a pre-erase operation of one or more blocks in the non-volatile memory in response to receiving the first command, and the non-volatile memory is configured to cease performing the pre-erase operation in response to receiving the second command.