Metal Adhesion Improvement Layer for Wet-Etch Patterning
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Solution Overview
Problem
Conventional organic masks used in semiconductor processes have weak resistance to wet etching, leading to etching failures and limiting the types of masks that can be used, which affects the metal patterning process.
Innovation Solution
A metal adhesion improvement composition is applied to a metal layer before applying an organic mask, enhancing the resistance to wet etching by using a polymer with specific structural units and heating it to form an adhesion improvement layer, allowing for easier and more reliable wet etching patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional organic mask is used, then the mask can be applied to the metal layer, but the resistance to wet etching is weak causing etching failures
Solution Approach 1:
The adhesion improvement layer is formed on the metal layer before applying the organic mask. This preliminary action modifies the metal surface to enhance subsequent wet etching resistance without complicating the mask application process
Solution Approach 2:
The adhesion improvement layer acts as an intermediary between the metal layer and the organic mask. It provides the necessary wet etching resistance while allowing the organic mask to be applied and removed easily
2Reliability
If an organic mask containing aromatic compound additive is used, then wet etching resistance is improved, but the range of applicable semiconductor processes is limited
Solution Approach 1:
The solution separates the wet etching resistance function from the organic mask by introducing a distinct adhesion improvement layer. This allows the organic mask to remain simple and compatible with various processes while the adhesion layer provides the necessary etching resistance
Solution Approach 2:
The adhesion improvement layer serves as an intermediary that provides wet etching resistance without requiring the organic mask to contain limiting additives, thereby expanding process compatibility
3Ease of manufacture
If the metal layer is directly etched without adhesion improvement treatment, then the process is simple, but etching defects occur due to poor adhesion
Solution Approach 1:
The adhesion improvement layer is formed as a preliminary treatment before etching. This simple additional step prevents etching defects by ensuring proper adhesion between the metal layer and organic mask, thereby improving etching accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the use of conventional organic masks with improved wet etching resistance, reducing etching defects and expanding the range of available mask options, thereby enhancing the patterning margin and process reliability.
Implementation Method 1
heating the metal adhesion improvement composition
Data Source
AI summary
Provided are a metal patterning method, a metal adhesion improvement composition for the semiconductor process, and a method of manufacturing the same. The metal patterning method includes depositing a metal layer on a substrate; coating an adhesion improvement layer on the metal layer; applying an organic mask on the adhesion improvement layer; performing exposing and etching; and removing the organic mask and adhesion improvement layer, wherein the coating of an adhesion improvement layer on the metal layer includes coating a metal adhesion improvement composition for the semiconductor process on the metal layer followed by heating. By using the metal adhesion improvement composition for the semiconductor process of the present invention, resistance to wet etching can be enhanced during semiconductor processes, allowing metal patterning to be performed very effectively.