Metal-Based Resist Chemistry for Self-Aligned Double Patterning
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Solution Overview
Problem
Conventional self-aligned double patterning processes are costly and complex, and are not compatible with metal-based resists, limiting their use in advanced photolithographic processes.
Innovation Solution
A photoresist precursor solution comprising a metal-based resist and a solubility-shifting agent (SSA) is used to form a relief pattern, with the SSA diffusing into an overcoat to create soluble regions, allowing for the formation of trenches between pattern structures, enabling self-aligned double patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional self-aligned double patterning processes are used, then pattern precision can be improved, but process complexity and cost increase
Solution Approach 1:
The patent extracts the solubility-shifting agent from the overcoat formulation and incorporates it into the metal-based resist layer. This allows the SSA to be co-deposited with the metal atoms and organic ligands, eliminating the need for separate SSA deposition steps and reducing overall process complexity while maintaining the ability to form precise patterns through controlled diffusion into the overcoat
Solution Approach 2:
The patent combines multiple functions into the metal-based resist formulation by integrating the solubility-shifting agent with the metal atoms and organic ligands. This merging of the resist and SSA into a single depositable layer reduces the number of process steps and materials handling operations, thereby reducing complexity and cost while preserving pattern precision
2Manufacturing precision
If conventional self-aligned double patterning processes are used, then pattern precision can be improved, but manufacturing cost increases
Solution Approach 1:
The patent extracts the solubility-shifting agent from separate processing steps and incorporates it into the metal-based resist, reducing the number of material deposition and handling operations. This consolidation reduces manufacturing cost while maintaining the precise pattern formation capability through controlled SSA diffusion
Solution Approach 2:
The metal-based resist formulation serves multiple functions: it provides the pattern-defining metal atoms, contains the organic ligands for stability and reactivity, and incorporates the solubility-shifting agent for overcoat modification. This multi-functionality reduces the number of separate materials and processes needed, thereby reducing manufacturing cost while maintaining precision
3Adaptability or versatility
If metal-based resists are used in advanced photolithographic processes, then compatibility with EUV lithography is improved, but integration with conventional patterning processes becomes difficult
Solution Approach 1:
The patent uses the solubility-shifting agent as an intermediary that bridges the metal-based resist and the organic overcoat. The SSA diffuses from the metal-based resist into the overcoat to create soluble regions, enabling the integration of metal-based resist processing with conventional organic overcoat materials and development processes, thereby facilitating process integration while maintaining EUV compatibility
Solution Approach 2:
The patent changes the solubility parameter of the overcoat regions through diffusion of the solubility-shifting agent from the metal-based resist. This parameter change enables selective removal of overcoat regions during development, allowing metal-based resist patterns to be integrated with conventional patterning processes that use organic materials and standard development chemistry
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces complexity and cost while achieving precise, small-scale patterning compatible with advanced photolithographic processes, such as EUV lithography, by using metal-based resists and solubility-shifting agents.
Implementation Method 1
diffusing a solubility-shifting agent from structures of the relief pattern into the overcoat to form soluble regions in the overcoat
Implementation Method 2
The photoresist material is a light-sensitive material that undergoes chemical changes when exposed to ultraviolet (UV) light, extreme ultraviolet (EUV) light
Data Source
AI summary
A method for self-aligned double patterning includes depositing an overcoat including a solubility-shiftable resist in openings of a relief pattern formed on a substrate, diffusing a solubility-shifting agent from structures of the relief pattern into the overcoat to form soluble regions in the overcoat, and developing the substrate to selectively remove the soluble regions and form trenches between the structures of the relief pattern and remaining structures of the overcoat. The relief pattern may be formed using a photoresist precursor solution that includes a solvent, the solubility-shifting agent, and a metal-based resist dissolved in the solvent and configured to be patterned as the relief pattern during a photolithographic process. The metal-based resist includes metal atoms and organic radiation-sensitive ligands. The solubility-shifting agent is configured to remain dormant within structures of the relief pattern during the photolithographic process.