High-Density Metal Bonding Structure With Integrated Pad-and-Via
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Solution Overview
Problem
Existing methods for forming metal-to-metal bonding structures in semiconductor dies are complex and inefficient, requiring multiple steps and not achieving high-density bonding effectively.
Innovation Solution
A method involving the formation of first semiconductor devices on a substrate, embedding metal interconnect structures in dielectric material layers, and creating integrated pad-and-via bonding structures through a selective etch process, using a layer stack including a silicate glass layer and a dielectric bonding material layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional multi-step methods are used to form metal-to-metal bonding structures, then the bonding pads can be formed, but the process complexity increases and high-density bonding is not achieved effectively
Solution Approach 1:
The patent combines the via formation and pad formation into a single integrated pad-and-via bonding structure. The via cavity extends through the dielectric layer to expose the bonding pad, eliminating the need for separate via and pad formation steps. This merging of functions directly reduces process complexity while enabling high-density bonding configurations.
Solution Approach 2:
The bonding structure is segmented into distinct functional regions: the via cavity portion for electrical connection and the pad portion for bonding interface. This segmentation allows each region to be optimized independently for its specific function while being formed through an integrated process, resolving the contradiction between process simplicity and bonding density.
2Productivity
If multiple steps are used to form bonding pads, then the bonding structures can be created, but the manufacturing efficiency decreases
Solution Approach 1:
The patent merges multiple formation steps into a single integrated process for creating pad-and-via bonding structures. The via cavity is formed extending through the dielectric layer to expose the bonding pad in one continuous operation, rather than through separate via drilling, pad formation, and alignment steps. This directly improves manufacturing efficiency by reducing the total number of process steps.
3Manufacturing precision
If conventional bonding methods are used, then electrical connection can be established, but high-density bonding is not achieved
Solution Approach 1:
The patent transitions from planar bonding structures to three-dimensional integrated pad-and-via structures. The via cavity extends vertically through the dielectric layer to expose the bonding pad, creating a multi-dimensional bonding interface. This dimensional change enables higher bonding density while maintaining reliable electrical connectivity through the vertical via path and horizontal pad interface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of high-density metal-to-metal bonding structures with improved efficiency, reducing the complexity of the bonding process and enhancing the electrical connectivity between semiconductor dies.
Implementation Method 1
converting the via cavities into integrated pad-and-via cavities by performing a selective etch process that etches a material of the first dielectric bonding material layer selective to a material of the first silicate glass layer
Data Source
AI summary
A bonded assembly of a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes first dielectric material layers located on first semiconductor devices, first metal interconnect structures embedded in the first dielectric material layers and electrically connected to the first semiconductor devices, and a first bonding-level dielectric layer located on the first dielectric material layers and embedding first metallic bonding structures that are electrically connected to a respective one of the first metal interconnect structures, and further embedding first dummy metallic bonding structures having a lesser vertical extent than the first metallic bonding structures and electrically isolated from the first metal interconnect structures.