Metal Bridge Interconnect Structure for Adjacent Line Connection

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Solution Overview

Problem

The formation of interconnect structures in semiconductor devices with high device density and performance requirements is complicated by the difficulty in connecting adjacent metal lines in critical pitch areas, leading to increased resistance and capacitance, and existing methods require additional layers and space, complicating manufacturing and causing area penalties.

Innovation Solution

A bridge metal pattern is used to directly connect adjacent metal lines in the same metal layer without the need for overlying or underlying metal lines or vias, reducing the number of layers required and simplifying the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional interconnect structures using overlying metal lines or vias are used to connect adjacent metal lines, then connectivity between metal lines is achieved, but the number of layers increases and manufacturing complexity increases

Engineering Contradiction:

ImproveconnectivityVSAvoidnumber of layers

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The bridge metal pattern extends horizontally between adjacent metal lines in the same layer rather than using vertical vias to connect to overlying metal lines. This dimensional change eliminates the need for additional layer stacks while maintaining electrical connectivity between the metal lines.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If traditional interconnect structures using vias and overlying metal lines are used, then metal lines can be connected, but contact resistance increases and area is consumed

Engineering Contradiction:

Improveelectrical connectivityVSAvoidcontact resistance

Core Design Contradiction:

ReliabilityVSLoss of energy

Solution Approach 1:

The connection path is segmented into two parts: the bridge metal pattern that horizontally connects adjacent metal lines, and the direct contact points where the bridge pattern touches the metal lines. This segmentation eliminates via structures that introduce high contact resistance, reducing overall electrical resistance while maintaining connectivity.

Inventive Principle:

Principle #1Segmentation

3Reliability

If additional layers and via structures are used to connect adjacent metal lines, then connectivity is achieved, but manufacturing process complexity increases

Engineering Contradiction:

ImproveconnectivityVSAvoidmanufacturing process complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The bridge metal pattern is formed in the same metal layer as the adjacent metal lines it connects, merging the connection function into the existing layer rather than requiring separate via layers and overlying metal layers. This merging simplifies the manufacturing process by reducing the number of patterning and deposition steps required.

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentEP4648093A1Semiconductor device including interconnect structure with metal bridge pattern connecting adjacent metal lines

Publication Date: 2025.11.12 SAMSUNG ELECTRONICS CO LTD

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Figure 4A~4B

AI summary

Provided is a semiconductor device which includes: a base layer (100); a 1st metal line (M11) and a 2nd metal line (M12) extended in a 1st direction (D1) and arranged in a 2nd direction (D2), intersecting the 1st direction (D1), in a 1st layer (110) above the base layer (100); and a bridge metal pattern (BR1) extended in the 2nd direction (D2) to connect the 1st metal line (M11) and the 2nd metal line (M11) in a 2nd layer (120) immediately above the 1st layer (110).