Metal Carbide Film Deposition With Time-Shared Composition Control
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Solution Overview
Problem
Existing techniques for controlling the composition of dissimilar metals in films, such as HfSiOx, are inadequate.
Innovation Solution
A film forming method that involves alternating the supply of precursor gases and a reducing agent in a time-sharing manner to control the concentrations of dissimilar metals in a metal carbide film, specifically TiAlC, by adjusting the order of supplying TiCl4, TMA, and H2 plasma processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the number of repetitions of Hf adsorption step and Si adsorption step are controlled according to target composition ratio, then the composition of HfSiOx film can be controlled, but the manufacturing precision and flexibility are insufficient
Solution Approach 1:
The film formation process is segmented into distinct time-sharing steps: first metal element precursor supply, second metal element precursor supply, and reducing agent supply. Each step is independently controlled with specific timing and sequence, allowing precise composition control through temporal segmentation rather than relying solely on repetition counts.
Solution Approach 2:
The patent introduces dynamic control by adjusting the order and timing of precursor supply steps. The process can be executed in multiple sequences (e.g., first metal then second metal, or alternating sequences), providing flexibility to dynamically optimize film composition and properties based on specific requirements.
2Manufacturing precision
If existing techniques are used to control metal composition in films, then some composition control is achieved, but the control over dissimilar metal compositions is inadequate
Solution Approach 1:
The first metal element precursor is supplied and adsorbed onto the substrate before the second metal element precursor is introduced. This preliminary action establishes a foundation layer that influences subsequent deposition, enabling controlled composition gradients and improved precision in dissimilar metal film formation.
Solution Approach 2:
The patent employs periodic cycling of precursor supply steps, where the first and second metal element precursors are supplied alternately in repeated cycles. This periodic action allows fine-tuning of metal ratios through controlled cycle numbers and durations, enhancing both precision and flexibility in composition control.
3Productivity
If multiple precursor gases are supplied simultaneously, then film formation efficiency is improved, but composition control precision deteriorates
Solution Approach 1:
The simultaneous supply of multiple precursors is segmented into sequential time-sharing steps. The first metal precursor is supplied during a first time period, followed by the second metal precursor during a second time period, and the reducing agent during a third time period. This temporal segmentation maintains composition precision while preserving overall process efficiency.
Solution Approach 2:
The patent maintains continuous film formation through optimized time-sharing sequences with minimal idle time between steps. By carefully designing the timing and sequence of precursor supplies, the process achieves near-continuous deposition, preserving productivity while enabling precise composition control through sequential rather than simultaneous supply.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control of the compositions of Ti and Al in the TiAlC film, allowing for adjustment of the work function by varying the Al concentration, thereby enhancing film properties.
Implementation Method 1
supplying a reducing agent to the substrate
Implementation Method 2
H2 plasma processing step
Implementation Method 3
a step of adsorbing Hf and the number of repetitions of a step of adsorbing Si
Data Source
AI summary
A film forming method for forming a metal carbide film on a substrate, includes: forming a metal carbide film including a first metal element and a second metal element different from the first metal element on the substrate by performing, multiple times in a time-sharing manner: supplying a first precursor gas including the first metal element and not including carbon to the substrate; supplying a second precursor gas including the second metal element and including carbon to the substrate; and supplying a reducing agent to the substrate, wherein concentrations of the first metal element and the second metal element included in the metal carbide film are controlled by adjusting the order of the supplying the first precursor gas, the supplying the second precursor gas, and the supplying the reducing agent.