Metal Carbide Film Work Function Control via Time-Divisional Gas Supply
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Solution Overview
Problem
Existing semiconductor manufacturing techniques face challenges in independently controlling the concentrations of carbon and metal elements in metal films, particularly in forming metal carbide films like TiAlC, which are crucial for adjusting the work function of transistors, as they often require specific values for P-type and N-type transistors.
Innovation Solution
A method involving a substrate processing device that time-divisionally supplies a carbon-free metal precursor gas and a metal-free carbon-containing gas to form a metal carbide film, allowing independent control of carbon and metal element concentrations by alternating cycles of precursor gases, enabling precise adjustment of the work function.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a metal carbide film is formed using conventional methods, then the film can be created on the substrate, but the concentrations of carbon and metal elements cannot be independently controlled
Solution Approach 1:
The gas supply process is segmented into separate cycles: one cycle supplies metal precursor gas while another cycle supplies carbon-containing gas. This segmentation allows independent control of metal element and carbon concentrations in the metal carbide film, resolving the contradiction between manufacturing precision and process complexity by organizing the complex process into manageable, independent segments.
Solution Approach 2:
The patent employs periodic action by alternating between metal precursor gas supply cycles and carbon-containing gas supply cycles. This periodic supply pattern enables precise control over the stoichiometry and composition of the metal carbide film, achieving independent control of element concentrations through rhythmic, repeating gas supply sequences.
2Adaptability or versatility
If the work function of metal films is adjusted to different values, then the performance of transistors can be optimized, but the controllability of work function becomes challenging
Solution Approach 1:
The patent applies parameter changes by systematically varying the supply ratios, flow rates, and cycle durations of metal precursor gas and carbon-containing gas. These parameter adjustments directly control the carbon content and metal element composition in the metal carbide film, thereby precisely tuning the work function to different values for optimized transistor performance.
Solution Approach 2:
The patent utilizes composite materials by forming metal carbide compounds (such as TiAlC) with specific stoichiometric ratios. By controlling the composition of this composite material through separated gas supply cycles, the work function can be precisely adjusted, achieving both adaptability and manufacturing precision in work function control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of the work function of the metal carbide film, enhancing the controllability of atomic concentrations and film thickness, thereby improving the performance and consistency of semiconductor devices.
Implementation Method 1
forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate
Data Source
AI summary
A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate.