Metal Chalcogenide Pillar Formation via Parameter Changes
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Solution Overview
Problem
Existing methods for forming self-aligned metal oxide pillars face challenges such as structural degradation, non-uniform growth, and residual un-oxidized metal due to rapid volume expansion during oxidation, leading to issues like bending or leaning of columns and non-uniform growth.
Innovation Solution
The use of metal chalcogenides like tungsten sulfide or molybdenum sulfide instead of tungsten oxide, with a chalcogen precursor containing substantially no oxygen, to form self-aligned pillars that are stiffer and exhibit more uniform growth, avoiding the limitations of traditional metal oxide pillar formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal is oxidized to form metal oxide pillars, then self-aligned structures are formed, but rapid volume expansion leads to structural degradation and bending of columns
Solution Approach 1:
The patent changes the chemical composition parameter by using metal chalcogenides (sulfides, selenides, tellurides) instead of metal oxides. This substitution fundamentally alters the volumetric expansion characteristics during formation, reducing the expansion from over 80% in oxides to approximately 30% in chalcogenides, thereby maintaining structural integrity while achieving self-aligned pillar formation
2Manufacturing precision
If metal is oxidized to form metal oxide pillars, then self-aligned structures are formed, but rapid volume expansion leads to non-uniform growth
Solution Approach 1:
By changing the material parameter from metal oxide to metal chalcogenide, the patent achieves more controlled and uniform volumetric expansion during pillar formation. The reduced expansion ratio of metal chalcogenides compared to metal oxides allows for more uniform growth throughout the pillar structure, improving manufacturing precision
3Reliability
If metal is oxidized to form metal oxide pillars, then self-aligned structures are formed, but residual un-oxidized metal remains at the bottom of the trench
Solution Approach 1:
The patent changes the chemical reaction parameter by using chalcogen precursors instead of oxygen for the formation reaction. This substitution enables complete transformation of the metal film to metal chalcogenide without leaving residual unreacted metal, as the chalcogenization process proceeds to completion more effectively than oxidation in this context
4Strength
If tungsten oxide is used to form self-aligned pillars, then pillars are formed with high thermal expansion and high Young's modulus, but the columns are less stiff and stronger compared to metal chalcogenides
Solution Approach 1:
The patent changes the material parameter from tungsten oxide to metal chalcogenides (tungsten sulfide, molybdenum sulfide, etc.), which possess superior mechanical properties including higher stiffness and strength. This material substitution directly addresses the limitation of insufficient column strength while maintaining the self-aligned formation mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in stiffer, stronger, and more uniformly grown self-aligned structures with improved fidelity to the feature shape, reducing the likelihood of structural degradation and residual metal issues.
Implementation Method 1
The metal film is exposed to a chalcogen precursor to form a metal chalcogenide pillar which extends from the at least one feature
Implementation Method 2
The volumetric expansion during oxidization pushes a pillar out of the holes or trenches
Data Source
AI summary
Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.