Metal Cluster Photoresist Composition for Fine EUV Circuit Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional photoresists struggle to form ultra-fine patterns due to resolution issues caused by acid diffusion, limiting further miniaturization in semiconductor photolithography.
Innovation Solution
A photosensitive composition containing transition metal or poor metal compounds with a carboxy ligand having an alicyclic structure and a double bond, which forms a cluster centered on the metal element, and reacts to extreme ultraviolet (EUV) rays to create a high-resolution, low-roughness pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresists containing photoacid generators are used, then high sensitivity is achieved, but resolution decreases due to acid diffusion
Solution Approach 1:
The patent extracts and eliminates the photoacid generator component from the photoresist composition. By using a metal compound (containing Zn, Sn, or a metal cluster) as the photosensitive material instead of conventional photoacid generators, the invention removes the source of acid diffusion that causes resolution degradation, thereby achieving both high resolution and reliable pattern formation.
Solution Approach 2:
The invention changes the chemical composition parameter of the photoresist by replacing organic photoacid generators with inorganic metal compounds. This parameter change fundamentally alters the photosensitivity mechanism, eliminating acid diffusion while maintaining photosensitivity through direct metal compound photolysis, thus resolving the contradiction between resolution and pattern quality.
2Productivity
If circuit patterns are miniaturized to achieve higher capacity, then device capacity increases, but resolution requirements become more stringent and are difficult to meet with conventional resists
Solution Approach 1:
By removing the photoacid generator that causes acid diffusion, the invention enables the formation of ultra-fine patterns required for miniaturized high-capacity devices. The metal compound-based photoresist achieves the resolution necessary for continued device scaling and capacity increase.
Solution Approach 2:
The invention uses composite metal compounds (including metal clusters composed of multiple metal atoms) as the photosensitive material. These composite materials provide enhanced photosensitivity and resolution capabilities compared to conventional organic photoresists, enabling further circuit miniaturization while maintaining manufacturing precision.
3Manufacturing precision
If non-chemically amplified photoresists based on metal elements are used, then fine pattern formation is enabled, but etching resistance and coating properties need improvement
Solution Approach 1:
The patent employs composite metal compounds including metal clusters (comprising 2-10 metal atoms) as the photosensitive material. These composite materials provide both the fine pattern formation capability and enhanced etching resistance, overcoming the limitations of simpler metal compound photoresists while maintaining non-chemically amplified photosensitivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high-resolution patterns with low roughness and sensitivity to EUV exposure, capable of forming half-pitch 100 nm or 50 nm L&S patterns with improved etching resistance and coating properties.
Implementation Method 1
The transition metal cluster compound, complex compound, and photosensitive composition containing the same according to the present invention form a negative-type pattern by being polymerized and rendered insoluble in an organic solvent by the reaction of a double bond in a ligand upon absorption of light energy after exposure to extreme ultraviolet (EUV) rays.
Data Source
AI summary
The present invention provides a compound capable of realizing fine circuit patterns, a photosensitive composition containing the same, and a pattern forming method using the photosensitive composition. The pattern forming method uses a photosensitive composition comprising a compound composed of a transition metal or a poor metal element and of a carboxy ligand including an alicyclic structure having a double bond.