Metal Complex Resist Composition for High-Resolution EUV Patterning
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Solution Overview
Problem
Existing resist compositions face challenges in achieving stability, sensitivity, resolution, and reduced line width roughness (LWR) during high-energy radiation processes like EB and EUV lithography, particularly due to acid diffusion and shot noise, leading to performance degradation and pattern defects.
Innovation Solution
A resist composition based on a metal complex with specific ligands, such as a tetranuclear zinc cluster, which stabilizes the complex and minimizes acid diffusion, enhancing sensitivity, resolution, and reducing LWR through non-chemically amplified mechanisms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chemically amplified resist compositions are designed to enhance sensitivity and contrast by acid diffusion, then sensitivity and contrast are improved, but image blurs occur and resolution deteriorates
Solution Approach 1:
The patent extracts and eliminates the photoacid generator component from the resist composition, transitioning from a chemically amplified system to a non-chemically amplified system. This removal prevents acid diffusion entirely while maintaining sensitivity through direct exposure mechanisms, thereby resolving the contradiction between sensitivity enhancement and resolution preservation
Solution Approach 2:
The patent changes the fundamental parameter of the resist mechanism from chemical amplification via acid diffusion to direct exposure response. By altering the working principle from indirect chemical amplification to direct exposure, the system achieves both high sensitivity and high resolution without the trade-off inherent in chemically amplified systems
2Manufacturing precision
If post-exposure bake temperature and time are reduced to minimize acid diffusion, then resolution is improved, but sensitivity and contrast are drastically reduced
Solution Approach 1:
The patent removes the photoacid generator from the resist composition, eliminating the need for post-exposure bake processing entirely. Without acid generation, there is no acid diffusion to control, and thus no trade-off between PEB conditions and sensitivity, allowing high sensitivity to be maintained while achieving high resolution
Solution Approach 2:
The patent performs the patterning action directly during exposure without requiring subsequent PEB processing to complete the chemical amplification reaction. The exposure itself directly creates the solubility contrast needed for patterning, eliminating the need for PEB and its associated sensitivity-resolution trade-off
3Reliability
If inorganic resist compositions containing highly EUV-absorbing elements are used to reduce shot noise influence, then sensitivity is improved, but storage stability and solubility in resist solvents deteriorate
Solution Approach 1:
The patent employs a composite material system combining organic polymer matrix with metal complex additives that have high EUV absorption. This composite approach maintains the storage stability and solubility characteristics of the organic polymer while incorporating the high EUV absorption properties needed for reduced shot noise influence and high sensitivity
Solution Approach 2:
The patent changes the chemical composition parameters by selecting metal complexes with specific ligand structures that balance EUV absorption capability with compatibility to organic resist solvents and storage stability. By optimizing the molecular structure and composition parameters, the system achieves high sensitivity without sacrificing stability
4Productivity
If feature size is reduced to achieve higher integration density, then productivity is improved, but acid diffusion causes image blurs and manufacturing precision deteriorates
Solution Approach 1:
The patent removes the photoacid generator to eliminate acid diffusion, enabling the formation of finer patterns without image blurs. This allows continued scaling to smaller feature sizes for higher integration density while maintaining the manufacturing precision required for viable patterns
Solution Approach 2:
The patent changes the fundamental mechanism from chemically amplified exposure to direct exposure, enabling the formation of finer patterns without acid diffusion. This parameter change allows continued scaling to smaller feature sizes while maintaining pattern fidelity, thereby supporting higher integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition exhibits high stability, sensitivity, and reduced LWR, facilitating precise micropatterning with improved storage stability and minimal performance changes over time.
Implementation Method 1
a metal complex containing a metal atom and a ligand... when processed by photolithography using high-energy radiation, typically EB and EUV lithography
Implementation Method 2
Hydrogensilsesquioxane (HSQ) is a material for a negative resist composition which turns insoluble in alkaline developer through crosslinking by condensation reaction of silanol generated upon EB or EUV exposure
Implementation Method 3
polymethyl methacrylate (PMMA). It is a positive resist material which increases solubility in organic solvent developer through the mechanism that the molecular weight becomes lower as a result of scission of the main chain upon EB or EUV exposure
Data Source
AI summary
The resist composition comprises a metal complex containing a metal, typically zinc and a specific ligand exhibits a high sensitivity, high resolution and improved LWR when processed by photolithography. The composition is stable during storage and easy to handle. The resist composition comprises a metal complex containing a metal atom and a ligand having the formula (1a), (1b) or (1c). R1, R2, R3, R4, R5, R6 and R7 are each independently hydrogen, a C2-C20 hydrocarbylcarbonyl group which may contain a heteroatom, or C1-C20 hydrocarbyl group which may contain a heteroatom, *1 and *2 each designate a point of attachment to the metal atom.