Metal-Complex Photoresist Composition for Low-Roughness EUV Lithography
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Solution Overview
Problem
As semiconductor devices continue to shrink, the process windows for photolithographic processing have become increasingly tight, necessitating advances in Extreme Ultraviolet Lithography (EUVL) to maintain device scaling and meet design criteria for higher device density and performance.
Innovation Solution
The development of a novel organometallic complex-based photoresist with a metallic core and ligands such as alkenyl or alkynyl groups, which enhances EUV sensitivity, reducing the EUV dose required for pattern development and minimizing line width roughness, combined with an EUV lithography system utilizing a laser-produced plasma (LPP) radiation source to improve exposure throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist materials are used, then existing process windows are maintained, but EUV sensitivity is insufficient and line width roughness increases
Solution Approach 1:
The patent employs a composite photoresist system consisting of organometallic complex precursors combined with specific ligands (alkenyl or alkynyl groups). This composite approach creates a material that simultaneously achieves high EUV sensitivity and low line width roughness, resolving the contradiction between these two parameters.
Solution Approach 2:
The patent modifies the chemical composition parameters of the photoresist by incorporating organometallic complexes with specific ligand structures. This parameter change in material composition enables improved EUV absorption and reduced line width roughness, addressing both sensitivity and precision requirements.
2Productivity
If device size is reduced to increase device density, then higher device density is achieved, but process windows become tighter and manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The patent changes the photoresist material parameters to achieve sharper patterning characteristics. The organometallic complex formulation provides improved contrast and reduced line width roughness, enabling precise manufacturing at smaller device dimensions and maintaining process window tolerance despite tighter constraints.
3Productivity
If EUV dose is reduced to improve sensitivity, then EUV exposure efficiency increases, but pattern development quality may deteriorate
Solution Approach 1:
The patent modifies the photoresist composition to enhance EUV absorption efficiency. The organometallic complex with specific ligands provides improved EUV sensitivity, allowing reduced exposure doses while maintaining pattern dimension accuracy and development quality, thus resolving the contradiction between throughput and precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables improved EUV sensitivity and reduced line width roughness, enhancing pattern dimension accuracy and increasing EUV exposure efficiency, thereby supporting the continued miniaturization of semiconductor devices and maintaining performance standards.
Implementation Method 1
an EUV lithography system utilizing a laser-produced plasma (LPP) radiation source
Implementation Method 2
a metal complex including a metallic core and at least one ligand bonded to the metallic core, wherein the at least one ligand includes an alkenyl group, an alkynyl group, or a combination thereof
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, exposing the photoresist layer to an EUV radiation, and developing the exposed photoresist layer. The photoresist layer has a composition including a metal complex including a metallic core and at least one ligand bonded to the metallic core. The at least one ligand includes an alkenyl group, an alkynyl group, or a combination thereof.