Metal Complex Semiconductor Layer for Organic Electronic Device Voltage and Lifetime
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Solution Overview
Problem
There is a need to improve the performance of organic semiconductor materials and electronic devices, particularly in terms of operating voltage, lifetime, current efficiency, and thermal properties, to enhance the characteristics of compounds used in these devices.
Innovation Solution
The use of a compound comprising a metal M and a ligand L, represented by a specific formula, is introduced as a semiconductor layer in organic electronic devices, where R1 and R2 can form rings with neighboring sulfur, nitrogen, or carbon atoms, and are connected via direct bonds, with R1 and R2 being alkyl, aryl, or heteroaryl groups that may include electron-withdrawing substituents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic semiconductor materials are used, then device structure is simple, but operating voltage is high and lifetime is short
Solution Approach 1:
The patent changes the chemical composition parameters of the semiconductor layer by introducing specific metal complexes with defined ligands (formula 1) and controlled ratios (0.1-10 wt% metal complex in host material), thereby optimizing both operating voltage and device lifetime simultaneously
Solution Approach 2:
The patent creates a composite semiconductor layer combining host material (TCTA, TAPC, or TAPC) with metal complexes (Cu(I), Ag(I), Au(I), Ir(III), or Pt(II)) where the metal complex acts as a dopant or additive to modify the electrical and thermal properties of the base material, achieving improved performance
2Productivity
If conventional organic semiconductor materials are used, then manufacturing is easy, but current efficiency is low
Solution Approach 1:
The patent optimizes the concentration parameter of metal complexes (0.1-10 wt%) in the semiconductor layer to maximize current efficiency while maintaining compatibility with existing vacuum deposition and solution processing manufacturing methods
Solution Approach 2:
The host material (TCTA, TAPC, or TAPC) serves as an intermediary matrix that facilitates the incorporation of metal complexes into the semiconductor layer, enabling improved current efficiency while maintaining ease of manufacture through established deposition techniques
3Temperature
If conventional organic semiconductor materials are used, then device structure is simple, but thermal properties are insufficient
Solution Approach 1:
The patent modifies the thermal properties by changing the chemical structure parameters of the semiconductor compounds, specifically incorporating metal complexes with ligands containing electron-withdrawing groups that enhance thermal stability and resistance to thermal degradation
Solution Approach 2:
The patent forms a composite semiconductor system where metal complexes with specific ligand structures (formula 1) are integrated into the organic semiconductor matrix, providing improved thermal properties while maintaining relatively simple device architecture
Data Source
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AI summary
The present invention relates to an organic electronic device comprising an anode, a cathode, at least one photoactive layer, and at least one semiconductor layer; wherein the at least one semiconductor layer is arranged between the anode and at least one photoactive layer, wherein the at least one semiconductor layer comprises a compound comprising a metal M and at least one ligand L represented by formula (1), a display device comprising the organic electronic device, and to compounds having the formula (3) or (5).