Metal-Containing Film Composition for Etching Selectivity

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Solution Overview

Problem

Conventional multilayer resist methods face challenges in achieving rational production processes for semiconductor devices due to the limitations of organic and silicon-containing films, particularly in achieving excellent etching selectivity and heat resistance, especially with the increasing complexity and miniaturization of semiconductor devices.

Innovation Solution

A composition comprising specific compounds with cationic functional groups and metal atoms like germanium, tin, or zirconium, which form crosslinked structures and salts, enhancing etching selectivity and heat resistance, is used to create a metal-containing film suitable for semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional organic films and silicon-containing films are used in multilayer resist methods, then the production process is simple, but the etching selectivity and heat resistance are insufficient for fine patterns

Engineering Contradiction:

Improveetching selectivityVSAvoidproduction process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs composite materials by combining organic compounds (resist materials) with metal compounds (germanium, tin, or zirconium compounds) to form a multilayer structure. This composite approach enables the film to simultaneously achieve excellent etching selectivity and heat resistance that neither organic nor silicon-containing films alone can provide, while maintaining a rational production process

Inventive Principle:

Principle #40Composite materials

2Temperature

If conventional organic films and silicon-containing films are used in multilayer resist methods, then the production process is simple, but the heat resistance is insufficient for fine patterns

Engineering Contradiction:

Improveheat resistanceVSAvoidproduction process complexity

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The composite structure of organic and metal compounds provides enhanced heat resistance through the metal compound component, which maintains structural stability at high temperatures during etching processes, while the organic component provides the necessary resist properties

Inventive Principle:

Principle #40Composite materials

3Reliability

If metal-containing compositions are used to improve etching selectivity, then the etching selectivity is improved, but the filling properties into recessed portions deteriorate

Engineering Contradiction:

Improveetching selectivityVSAvoidfilling properties

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent optimizes the molecular weight parameters of both the organic compound (10,000-200,000) and metal compound (100-5,000) to achieve the right balance between etching selectivity and filling properties. This parameter optimization ensures the composition can both provide excellent etching selectivity and fill recessed portions effectively

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves excellent etching selectivity and heat resistance, improving the filling properties into recessed portions and enabling the formation of fine patterns and complex semiconductor device structures.

Implementation Method 1

a compound (a1) containing a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom... a compound (B) which is at least one selected from the group consisting of: a compound (b1) containing a carboxy group and at least one of a germanium atom, a tin atom, a selenium atom or a zirconium atom

Methodology Applied

Scientific EffectCrosslinking: Chemical Bonding

Implementation Method 2

a composition for forming a metal oxide-containing film, which composition contains: a metal oxide-containing compound obtained by the hydrolysis and the like of a metal compound

Methodology Applied

Scientific EffectHydrolysis: Hydrolysis

Data Source

PatentUS11209735B2Composition for forming metal-containing film, method of producing composition for forming metal-containing film, semiconductor device, and method of producing semiconductor device

Publication Date: 2021.12.28 MITSUI CHEMICALS INC

AI summary

A composition for forming a metal-containing film, the composition including: a compound (A) which is at least one selected from the group consisting of: a compound (a1) containing a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom, and a compound (a2) which is a compound other than the compound (a1) and which contains a nitrogen atom; and a compound (B) which is at least one selected from the group consisting of: a compound (b1) containing a carboxy group and at least one of a germanium atom, a tin atom, a selenium atom or a zirconium atom, and an ester of the compound (b1).