Metal-Containing Film for Semiconductor Patterning
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Solution Overview
Problem
In semiconductor device manufacturing, the miniaturization of pattern sizes leads to degraded resolution performance and high aspect ratio issues in photoresist films, causing pattern collapse and inadequate dry etching resistance.
Innovation Solution
A compound for forming a metal-containing film is developed, comprising at least one metal atom from Ti, Zr, or Hf, and a multidentate ligand with a cyclic ether structure. This compound is used in a composition for forming a resist underlayer film, enhancing adhesiveness to a resist upper layer film and preventing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the photoresist film thickness is decreased to enable pattern miniaturization, then the pattern size can be reduced, but the resolution performance degrades and pattern collapse occurs due to high aspect ratio
Solution Approach 1:
The patent introduces a multilayer resist structure with a middle layer having different etch selectivity between the upper photoresist layer and the substrate. This adds a dimensional layer to the system, allowing the photoresist film to be thinner while the middle layer provides the necessary mechanical support and etching protection, thus enabling pattern miniaturization without degrading resolution performance
Solution Approach 2:
The patent uses a composite resist system consisting of multiple layers with different material properties. The middle layer is specifically designed to have etch selectivity that differs from both the photoresist upper layer and the substrate, creating a composite structure that simultaneously achieves thin photoresist for miniaturization while maintaining resolution through the supportive middle layer
2Length of moving object
If the photoresist film thickness is decreased for pattern miniaturization, then smaller patterns can be formed, but pattern collapse occurs due to high aspect ratio
Solution Approach 1:
By adding a middle layer between the photoresist and substrate, the patent creates a three-layer structure that provides additional mechanical support. This dimensional addition reduces the aspect ratio effect on the photoresist pattern, preventing collapse while allowing miniaturization
Solution Approach 2:
The middle layer acts as an intermediary between the photoresist upper layer and the substrate. It provides mechanical support to prevent pattern collapse while having different etch selectivity to enable proper pattern transfer during dry etching processes
3Manufacturing precision
If a photoresist composition with high resolution is used, then better pattern definition is achieved, but dry etching resistance becomes weak
Solution Approach 1:
The patent segments the resist system into multiple functional layers: the upper photoresist layer provides high resolution pattern definition, while the middle layer provides dry etching resistance. This segmentation allows each layer to be optimized for its specific function without compromise
Solution Approach 2:
The patent creates a composite resist system where the middle layer is specifically designed with materials that provide strong dry etching resistance, while the upper photoresist layer maintains high resolution. The combination of these materials in a multilayer structure simultaneously achieves both high resolution and strong etching resistance
4Length of moving object
If a thinner photoresist film is used for miniaturized patterns, then smaller features can be patterned, but adequate dry etching resistance cannot be secured
Solution Approach 1:
The patent adds a middle layer dimension to the resist structure, allowing the photoresist film to be thin for miniaturization while the middle layer provides the necessary dry etching resistance. The multilayer structure decouples the thickness requirement from the etching resistance requirement
5Manufacturing precision
If the photoresist film is used as an etching mask for substrate processing, then pattern transfer is achieved, but the photoresist film is damaged and collapses due to insufficient etch selectivity
Solution Approach 1:
The patent segments the etching protection function from the photoresist layer and assigns it to a dedicated middle layer. This middle layer has high etch selectivity to protect the substrate during processing, while the photoresist layer maintains its pattern integrity without bearing the mechanical stress of etching resistance
Solution Approach 2:
The middle layer serves as an intermediary that absorbs the mechanical stress and etching damage during substrate processing. It has high etch selectivity to protect the substrate while the photoresist upper layer remains intact, ensuring both accurate pattern transfer and photoresist film integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal-containing film exhibits high adhesiveness to the resist upper layer film, preventing pattern collapse and achieving favorable pattern shapes. It also provides high refractive index and excellent dry etching resistance, suitable for ArF immersion/High-NA exposure conditions.
Implementation Method 1
a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms
Implementation Method 2
It also provides high refractive index and excellent dry etching resistance, suitable for ArF immersion/High-NA exposure conditions
Implementation Method 3
excellent dry etching resistance, suitable for ArF immersion/High-NA exposure conditions
Data Source
Figure 1(A)~1(F)
Figure 2(G)~2(K)
Figure 3
AI summary
The present invention aims to provide: a compound for forming a metal-containing film that yields a resist middle layer film enabling to obtain a favorable pattern shape and having high adhesiveness to a resist upper layer film to prevent collapse of a fine pattern in a fine patterning process in a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition. A compound for forming a metal-containing film contains: at least one metal atom selected from a group consisting of Ti, Zr, and Hf; and a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms