Metal-Containing Photoresist Developer Composition for EUV Lithography
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Solution Overview
Problem
Conventional chemically amplified photoresists face challenges with reduced sensitivity and line edge roughness issues, particularly under extreme ultraviolet exposure, necessitating a high-performance photoresist with improved etching resistance, critical dimension uniformity, and line edge roughness characteristics.
Innovation Solution
A metal-containing photoresist developer composition comprising an organic solvent, an acid compound, and a conjugate base compound, which stabilizes pH and reduces instantaneous pH imbalance during development, enhancing critical dimension uniformity and line edge roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional chemically amplified photoresist is used to achieve high sensitivity, then sensitivity is improved, but line edge roughness increases and critical dimension uniformity deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the developer composition by introducing a buffer system with specific pH range (2-4) and controlled acid/base ratio (1:0.01 to 1:1). This parameter adjustment stabilizes the development process, reducing line edge roughness while maintaining the sensitivity benefits of chemically amplified photoresist through controlled pH conditions during development
2Use of energy by moving object
If conventional chemically amplified photoresist is used to achieve high sensitivity, then sensitivity is improved, but critical dimension uniformity deteriorates
Solution Approach 1:
The patent modifies the developer composition parameters by incorporating a buffer system that maintains pH between 2-4 with a specific acid to conjugate base ratio (1:0.01 to 1:1). This parameter control prevents pH fluctuations during development, ensuring consistent critical dimension uniformity while preserving the high sensitivity characteristics of the photoresist
3Illumination intensity
If photoresist with reduced elemental composition (smaller quantities of O, F, S) is used to improve absorbance at 13.5 nm, then absorbance is improved, but sensitivity under EUV exposure deteriorates
Solution Approach 1:
The patent adjusts the developer composition parameters including pH (2-4), buffer capacity, and acid-to-base ratio (1:0.01 to 1:1) to optimize the development process. These parameter changes compensate for the reduced sensitivity caused by low-absorbance photoresist formulations, enabling effective pattern formation under EUV exposure while maintaining the improved absorbance characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition improves critical dimension uniformity and reduces line edge roughness by maintaining a balanced acid-base system, stabilizing the pH and ensuring stable results in the photolithography process.
Implementation Method 1
an acid compound and a conjugate base compound of the acid compound... which stabilizes pH and reduces instantaneous pH imbalance during development
Data Source
AI summary
A metal-containing photoresist developer composition, and a method of forming patterns including a step (e.g., an act or task) of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, an acid compound, and a conjugate base compound of the acid compound.