Refined Metal-Containing Units Purification via Acidified Water
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Solution Overview
Problem
Current methods for producing metal-containing units for semiconductor applications are hindered by high levels of yield impurities, such as sodium, aluminum, and chlorides, which cause defects and corrosion, and the purification processes like distillation result in low yields and high costs.
Innovation Solution
A process involving the mixing of metal-containing units with deionized water adjusted to a pH of 2 to 5.5, followed by separation and drying under reduced pressure, effectively reduces yield impurities to below 5000 ppb, and is applicable in forming refined metal-containing units for semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple steps of distillation are used to purify refractory metal precursors, then purity of metal-containing units is improved, but productivity decreases and cost increases
Solution Approach 1:
The invention extracts and removes yield impurities from metal-containing units through a selective chemical process. The reagent reacts specifically with impurities (such as sodium, aluminum, iron, calcium, magnesium, and chloride ions) to form soluble complexes that can be separated from the desired metal-containing units, achieving purification without the need for multiple distillation steps
Solution Approach 2:
The invention changes the chemical environment by introducing a specific reagent system with controlled pH and stoichiometry. By adjusting parameters such as reagent concentration, pH level, and reaction temperature, the process selectively targets impurities while preserving the integrity of the metal-containing units, enabling effective purification in a single step
2Manufacturing precision
If multiple steps of distillation are used to purify refractory metal precursors, then purity of metal-containing units is improved, but manufacturing cost increases
Solution Approach 1:
The process extracts impurities through a single chemical treatment step rather than multiple distillation cycles. The reagent selectively binds to impurity ions, forming soluble complexes that are removed in one filtration or decantation step, dramatically reducing process complexity and cost
Solution Approach 2:
The invention employs inexpensive, readily available reagents (such as organic acids or chelating agents) that can be used in a single-pass process. These reagents are consumed in the reaction but enable impurity removal without requiring expensive equipment or multiple processing cycles, making the process economically viable for volume manufacturing
3Manufacturing precision
If high temperatures are used in distillation process, then purification is achieved, but yield impurities increase due to side reactions
Solution Approach 1:
The invention changes the temperature parameter from high (distillation conditions) to moderate or ambient temperatures. The chemical reagent system is designed to function effectively at lower temperatures, selectively reacting with impurities without causing thermal decomposition or side reactions of the metal-containing units, thus eliminating byproduct formation
Solution Approach 2:
The reagent acts as an intermediary that mediates the separation between impurities and desired products. It forms temporary soluble complexes with impurity ions, enabling their removal without direct thermal processing of the metal-containing units, thereby preventing unwanted side reactions and byproduct formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process significantly reduces yield impurities by at least 15% to 75%, enhancing the purity and commercial viability of metal-containing units for semiconductor processes, improving device performance and yield.
Implementation Method 1
mixing a solution of MU with deionized water wherein pH of deionized water is adjusted in the range of from about 2 to about 5.5
Implementation Method 2
mixing a solution of MU with deionized water
Implementation Method 3
drying in a vacuum oven under reduced pressure at a temperature less than 150° C.
Implementation Method 4
drying in a vacuum oven under reduced pressure
Data Source
AI summary
The present disclosure relates to a process for forming a refined metal-containing unit by reducing yield impurities with acidified deionized water. Another embodiment is a composition comprising the refined metal-containing unit. Yet another embodiment is a process for forming a patterned substrate by depositing a composition comprising the refined metal-containing unit on a substrate, drying the film comprising the refined metal-containing unit, exposing the film comprising the refined metal-containing composition to a source of actinic radiation, and transferring the pattern to substrate. The disclosed embodiments are useful in producing patterned substrates by direct or indirect pattern transfer from films comprising the refined metal-containing unit.