Metal Core Substrate Interconnects for Dense Low-Coupling Vias
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Solution Overview
Problem
Current packaging technologies face challenges such as high cost, limited resolution, mechanical weakness, heat dissipation issues, and capacitive coupling limitations in advanced semiconductor applications, particularly with Through Panel Vias, Through Silicon Vias, and Through Glass Vias, which hinder the development of efficient System-on-Foil devices for high-frequency bandwidth, low latency, and high data rate requirements.
Innovation Solution
A metal core substrate based package interconnect system with through metal vias surrounded by dielectric material, allowing for the isolation of metal in-substrate structures from the substrate and enabling efficient signal, power, and ground transmission, while reducing capacitive coupling and enhancing thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If Through Panel Vias are used in printed circuit boards, then electrical connectivity through substrate is achieved, but wire resolution and feature size are limited to large dimensions (4 mil or 3 mil lines, 6 mil holes)
Solution Approach 1:
The patent changes the fundamental parameters of via fabrication by transitioning from mechanical drilling and electroplating to laser drilling and direct metal deposition. This enables sub-10 micrometer via diameters and 1 micrometer wire resolutions that were previously unachievable with conventional PCB manufacturing processes
Solution Approach 2:
The patent replaces mechanical drilling processes with laser drilling, and traditional electroplating with direct metal deposition techniques. This substitution eliminates the size constraints imposed by mechanical tooling while achieving higher precision through optical and thermal field control
2Manufacturing precision
If Through Silicon Vias are used, then high density interconnect is achieved, but mechanical strength decreases and substrate becomes weak and subject to cracking
Solution Approach 1:
The patent employs composite material structures where metal in-substrate structures are embedded within a metal core substrate. This composite approach provides both the high density interconnect capability of TSVs and the mechanical strength of the metal substrate, eliminating the fragility issue while maintaining via density
Solution Approach 2:
The patent nests metal in-substrate structures within the metal core substrate, creating a hierarchical structure where conductive elements are embedded within the substrate matrix. This nesting provides mechanical support to the via structures while maintaining high interconnect density
3Reliability
If Through Glass Vias are used, then electrical isolation is achieved, but heat dissipation capability is reduced due to insulating glass material
Solution Approach 1:
The patent uses homogeneous metal materials for both the substrate and in-substrate structures, ensuring uniform thermal and electrical properties throughout. This eliminates the thermal barrier created by glass materials while maintaining electrical isolation through dielectric coatings applied to the metal structures
4Power
If standard device I/O pins are used for package-to-package connections, then electrical connectivity is achieved, but power consumption increases due to heavy power penalty
Solution Approach 1:
The patent creates universal interconnect structures that can serve multiple functions: signal transmission, power delivery, and ground reference through the same metal in-substrate structures. This multi-functionality reduces the need for separate dedicated power and ground vias, lowering overall power consumption while simplifying the interconnect architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides improved bandwidth, reduced latency, lower power consumption, increased routing density, and enhanced thermal management, addressing the limitations of existing technologies by enabling efficient signal and power transmission with reduced substrate warpage and capacitive coupling.
Implementation Method 1
isolating metal in-substrate structures from the substrate, thereby reducing capacitive coupling
Implementation Method 2
enhancing thermal conductivity
Data Source
AI summary
Metal core substrates made with a medal core patterned with metal in-substrate structures therethrough of the same metal and insolated from the metal core with dielectric in-substrate structures patterned therethrough can include interconnect structures deposited on top and back side surfaces thereof. The interconnect structures can include metal interconnect structures patterned therethrough which can connect with the metal in-substrate structures to create metal core substrate based package interconnect systems including various electronic, optical and other types of components within the metal core substrate based package interconnect systems. Multiple metal core substrate based package interconnect systems can be connected together through bonding or contacts. The metal core substrate based package interconnect systems can also include external electronic components connected thereto through contacts.