Metal-Diffused 3D Memory Channel Crystallization
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Solution Overview
Problem
Current methods for manufacturing three-dimensional memory devices, such as vertical NAND strings, face challenges in achieving efficient crystallization of semiconductor channels and forming reliable metal semiconductor alloy regions, which are crucial for enhancing memory device performance and density.
Innovation Solution
A method involving the formation of a stack with alternating insulator and conductive layers over a substrate, where a semiconductor channel with amorphous or polycrystalline material is created, and a metallic material is diffused through it to induce crystallization, forming a metal semiconductor alloy region, thereby improving the semiconductor channel's crystallinity and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If amorphous or polycrystalline semiconductor material is used in the semiconductor channel, then the manufacturing process is simplified and deposition is easier, but the crystallinity and electrical performance of the channel are insufficient
Solution Approach 1:
The patent applies parameter changes by introducing metallic material to alter the physical and chemical state of the semiconductor channel. The metal diffusion process changes the crystallization parameters of the amorphous or polycrystalline semiconductor material, transforming it into a highly crystalline structure with superior electrical properties while maintaining the simplicity of initial deposition
Solution Approach 2:
The metallic material acts as an intermediary substance that facilitates the transformation from amorphous/polycrystalline to highly crystalline semiconductor structure. The metal diffuses through the channel and serves as a catalyst or nucleation agent for crystallization, enabling the transition without requiring complex direct crystallization processes
2Ease of manufacture
If conventional methods are used to form metal semiconductor alloy regions, then the process is simpler, but the reliability and performance of the alloy regions are insufficient
Solution Approach 1:
The patent replaces conventional mechanical or physical alloy formation methods with a diffusion-based chemical process. Instead of using complex metallization steps or physical mixing, the metallic material diffuses through the semiconductor channel to form the alloy region, achieving superior reliability through controlled atomic-level mixing
Solution Approach 2:
The diffusion process utilizes parameter changes in temperature and concentration gradients to control the formation of metal semiconductor alloy regions. By adjusting diffusion parameters, the patent achieves reliable alloy formation with controlled composition and distribution, enhancing the reliability of the alloy regions
3Manufacturing precision
If the semiconductor channel is made highly crystalline through additional processing, then the electrical performance improves, but the manufacturing complexity and process steps increase
Solution Approach 1:
The patent merges the crystallization function with the existing metal diffusion process. Instead of adding separate crystallization processing steps, the metallic material diffusion simultaneously achieves both the alloy formation and the crystallization of the semiconductor channel, reducing overall process complexity while maintaining high crystallinity
Solution Approach 2:
The metallic material diffusion process serves multiple functions: it forms the metal semiconductor alloy region, induces crystallization of the semiconductor channel, and improves electrical performance. This multi-functional approach eliminates the need for separate processing steps, reducing manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-performance three-dimensional memory devices with improved crystallinity and density, enhancing the efficiency and reliability of the semiconductor channels and metal semiconductor alloy regions, thus addressing the limitations of existing technologies.
Implementation Method 1
A metallic material is diffused through at least a portion of the semiconductor channel
Implementation Method 2
The metallic material induces crystallization of the amorphous or polycrystalline semiconductor material in the semiconductor channel into a crystalline semiconductor material portion
Data Source
AI summary
A stack including an alternating plurality of first material layers and second material layers is provided. A memory opening is formed and at least a contiguous semiconductor material portion including a semiconductor channel is formed therein. The contiguous semiconductor material portion includes an amorphous or polycrystalline semiconductor material. A metallic material portion is provided at a bottom surface of the semiconductor channel, at a top surface of the semiconductor channel, or on portions of an outer sidewall surface of the semiconductor channel. An anneal is performed to induce diffusion of a metal from the metallic material portion through the semiconductor channel, thereby inducing conversion of the amorphous or polycrystalline semiconductor material into a crystalline semiconductor material. The crystalline semiconductor material has a relatively large grain size due to the catalytic crystallization process, and can provide enhanced charge carrier mobility.