Metal Electrode Inspection Using 3D Defect Height Screening
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Solution Overview
Problem
Conventional methods for detecting defects in semiconductor devices are inadequate as they rely solely on surface shape, color, and size, leading to incorrect classification of non-defective devices as defective, especially when defects have varying depths or heights that do not affect device performance.
Innovation Solution
A method that includes detecting defect candidates on the surface of metal electrodes using a visual inspection device, such as a CCD camera, and determining the quality of the semiconductor device based on both surface characteristics and depth or height information, setting specific criteria for concave and convex defects to improve screening accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional surface inspection methods are used to detect defects, then the inspection process is simple and fast, but the accuracy is insufficient leading to misclassification of non-defective devices
Solution Approach 1:
The patent transitions from two-dimensional surface inspection to three-dimensional defect characterization by measuring height information. The inspection device captures not only the presence but also the depth/height of surface irregularities, enabling differentiation between cosmetic surface variations and actual defects that affect device performance.
Solution Approach 2:
The patent introduces height/depth as an additional parameter for defect evaluation. By measuring the vertical dimension of surface irregularities and comparing against threshold values, the system transforms qualitative surface appearance assessment into quantitative defect classification, improving accuracy while maintaining operational efficiency.
2Measurement precision
If height information measurement is added to defect detection, then the accuracy improves, but the inspection time and process complexity increase
Solution Approach 1:
The patent combines surface imaging and height measurement functions into a single integrated inspection device. By merging these functions, the system captures both two-dimensional visual information and three-dimensional height data simultaneously in one inspection pass, avoiding the need for separate measurement steps that would increase inspection time.
Solution Approach 2:
The patent applies height threshold filtering to focus inspection resources on significant defects. By setting minimum height thresholds, the system ignores minor surface variations that fall below the threshold, processing only those irregularities that exceed the threshold and are likely to affect device performance, thus reducing overall processing time.
Data Source
AI summary
Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.