Metal Field Plate Integration for High-Voltage Breakdown Control
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Solution Overview
Problem
Conventional high voltage semiconductor devices require additional processes to achieve peak electric field dispersion, which decreases process efficiency and complicates manufacturing.
Innovation Solution
A high voltage semiconductor device with a metal field plate formed simultaneously with a thin film resistor between the source metal and gate electrode, improving peak electric field dispersion and breakdown voltage characteristics without additional processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional configurations or structures are formed in separate processes to disperse peak electric fields, then breakdown voltage characteristics are improved, but process efficiency decreases
Solution Approach 1:
The patent combines the formation of the metal field plate with the formation of the thin film resistor into a single process step. The metal field plate is formed as part of the thin film resistor fabrication process, eliminating the need for separate process steps to create additional electric field dispersion structures. This merging of processes maintains breakdown voltage characteristics while improving process efficiency.
Solution Approach 2:
The metal field plate structure serves multiple functions: it acts as both an electric field dispersion structure and as part of the thin film resistor configuration. By making the metal field plate integral to the thin film resistor formation, the patent achieves multi-functionality that reduces the total number of process steps while maintaining the required electrical characteristics.
2Reliability
If additional configurations or structures are formed in separate processes to disperse peak electric fields, then breakdown voltage characteristics are improved, but device complexity increases
Solution Approach 1:
The patent merges the creation of the metal field plate with the thin film resistor fabrication process. Instead of adding separate structures in additional process steps, the metal field plate is formed integrally as part of the resistor structure, thereby reducing process complexity while maintaining the electrical field dispersion needed for high breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal field plate effectively disperses peak electric fields and enhances breakdown voltage characteristics while maintaining process efficiency by being formed in the same process steps as the thin film resistor.
Implementation Method 1
improve peak electric field dispersion and breakdown voltage characteristics
Data Source
AI summary
Disclosed are a high voltage semiconductor device and a method of manufacturing the same. More particularly, a high voltage semiconductor device and a method of manufacturing the same include a metal field plate, which may be manufactured substantially simultaneously with a thin film resistor (TFR) (e.g., in the same process step[s] or sequence), between a source metal and a gate electrode to improve peak electric field dispersion and breakdown voltage characteristics.